Abstract
Flexible, free-standing composite films of poly(vinylidene fluoride) (PVDF) with Gallium Nitride (GaN) as fillers, in varying concentrations, were synthesized by sol–gel method. Modulations in the microstructural, morphological and dielectric properties, due to the addition of fillers, were investigated. Modifications in the spherocrystal structure, their dimensions and their number density were observed. Microstructural studies confirmed the presence of GaN nanoparticles in the matrix. FTIR and Raman spectroscopy revealed the presence of the three polymorphs of PVDF in the composite films. The dielectric constant of the composite films were found to increase with the increase in the filler concentration, to almost ~ 6 times that of the value for the pristine film due to the interfacial polarization playing between the polymer chains and the filler nanoparticles. Low values of dielectric constant at higher frequencies were observed due to the contribution of dipolar polarization. A peak-to-peak voltage of ~ 5.4 V, from a triboelectric nanogenerator fabricated using a 1 wt% composite films, was obtained.
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Acknowledgments
The authors would like to thank the Director, UGC-DAE CSR, the Centre-Director, UGC-DAE CSR, Indore Centre and the Scientist In-charge, UGC-DAE CSR, Kalpakkam Node, for their support and encouragement. The authors would also like to thank Dr. Md. Najam Anwar, Dr. H. Jena, Dr. Ramanathan, Mr. Mahima Kumar and Mr. Swaroop Chandra from IGCAR, for extending some of their facilities.
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AT: Data Acquisition and Curation; Formal analysis; Investigation; Writing; Editing. MJ: Data Acquisition and Curation; Editing. SD: Data Acquisition and Curation; Editing. SH: Conceptualization; Funding Acquisition; Project Administration; Resources; Software; Supervision; Validation; Writing-review and Editing.
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Thakur, A., Jangra, M., Dam, S. et al. Impedance studies of free-standing, flexible thin films of PVDF filled with gallium nitride nanoparticles. J Mater Sci: Mater Electron 33, 18658–18672 (2022). https://doi.org/10.1007/s10854-022-08715-7
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DOI: https://doi.org/10.1007/s10854-022-08715-7