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Improving the physical properties of polycrystalline-deficient Pr0.8Sr0.2−x□xMnO3 (0 ≤ x ≤ 0.2) compounds for electronic devices

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Abstract

Deficient strontium effects upon structural and spectroscopic properties of Pr0.8Sr0.2MnO3 have been investigated. Pr0.8Sr0.2−x□xMnO3 (0 ≤ x ≤ 0.2) powder samples have been elaborated by the conventional ceramic method. All the samples crystallized in the orthorhombic perovskite system with Pnma (for x = 0 and 0.05) and Pbnm (for x = 0.1 and 0.2) space groups. The impedance spectroscopy measurements, the AC conductivity was investigated in the frequency range 40 to 5 × 106 Hz and in the temperature range 80–500 K. DC measurements show that the studied compounds exhibit a semiconductor behavior in the temperature range studied. We have demonstrated that the conduction mechanism is governed by the hopping process at high temperatures as observed for doped perovskite materials. The AC conductivity results were well described by the Jonscher power law. The evolution of the frequency exponent s was determined in order to investigate the conduction mechanism in deficient structures. A discrepancy between the results obtained with the parent sample and deficient structures was observed. Analysis of the complex impedance shows that our structures obey Cole–Cole model. Nyquist plots were obtained using the Maxwell–Wagner equivalent circuit model. The evolution of the real and imaginary parts ε′ and ε″ of the permittivity was studied as a function of frequency, temperature, and strontium deficiency. Both ε′ and ε″ exhibit a strong dependence on these parameters. A step-like decrease in the dielectric constant ε′ was observed which may have originated from the space charge polarization and blocking electrode effect. The dielectric loss ε″ decreased with increasing frequency but increased with temperature for all studied samples. This result was correlated with the conduction mechanism which is governed by grain boundaries at low frequencies and grains at high frequencies. In addition, it affected the capacitance values in each frequency interval.

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Data availability

The datasets generated during and/or analyzed during the current study are available from the corresponding author. We would like to declare on behalf of my co-authors that the work described was original research that has not been published previously, and not under consideration for publication elsewhere, in whole or in part.

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Acknowledgements

This work has been supported by the Tunisian Ministry of Higher Education and Scientific Research.

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Authors and Affiliations

  1. Laboratoire de Physique des Matériaux, Faculté des Sciences de Sfax, Université de Sfax, B. P 1171, 3000, Sfax, Tunisia

    A. Ben Jazia Kharrat & W. Boujelben

  2. Laboratoire de Physique des Matériaux et des Nanomatériaux appliquee à l’Environnement, Faculté des Sciences de Gabès, Université de Gabès, cité Erriadh, 6079, Gabès, Tunisia

    K. Khirouni

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ABJK conceived this idea, analyzed the data, and wrote the manuscript. KK designed the electrical measurements. WB directed the project. All the authors discussed the results and contributed to the preparation of the manuscript.

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Correspondence to A. Ben Jazia Kharrat.

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Kharrat, A.B.J., Khirouni, K. & Boujelben, W. Improving the physical properties of polycrystalline-deficient Pr0.8Sr0.2−x□xMnO3 (0 ≤ x ≤ 0.2) compounds for electronic devices. J Mater Sci: Mater Electron 33, 18632–18657 (2022). https://doi.org/10.1007/s10854-022-08714-8

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