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High-responsivity (Ga2Ge)100−x(Ga3Sb2)x (x = 15, 30, 45, 60) photodetection sensor for optoelectronic applications

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Abstract

Electromagnetic signal detection for applications such as astronomy, product quality monitoring, health, and necessitates systems that are very responsive and wavelength selective. High quantum efficiencies and high responsibility have been demonstrated in photodetectors based on Ge–Ga–Sb, primarily in the visible range. The photoelectric responses of new low-voltage, high-responsivity, solution-processed, flexible photodetectors for optoelectronic applications are examined for the first time. This is accomplished by using the melt-quenching procedure to synthesize Ge–Ga–Sb compound and putting it on a silica glass substrate using the spin coating method. The films were investigated in the context of an electrical photodetection sensor based on impedance. Excellent responsivity, particular detectivity, external quantum efficiency, and response time were all demonstrated by the produced device. The findings show that Ge–Ga–Sb has good optoelectronic capabilities and might be used in applications with low optical intensity.

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Acknowledgements

The authors thank to Dr Pravin Kumar Singh, Institute of Advanced Materials, IAAM Sweden for his expertise and assistance throughout all aspects of this study and for help in writing the manuscript.

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The authors have not disclosed any funding.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, M. M. M. University of Technology, Gorakhpur, 273010, India

    Rajnish Raj & Pooja Lohia

  2. Amorphous Semiconductor Research Lab, Department of Physics and Material Science, M. M. M. University of Technology, Gorakhpur, 273010, India

    D. K. Dwivedi

  3. Nanomaterials and Sensors Research Laboratory, Department of Physics, Babasaheb Bhimrao Ambedkar University, Lucknow, 226025, India

    Arpit Verma & B. C. Yadav

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  1. Rajnish Raj
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  2. Pooja Lohia
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  5. B. C. Yadav
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Correspondence to D. K. Dwivedi.

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Raj, R., Lohia, P., Dwivedi, D.K. et al. High-responsivity (Ga2Ge)100−x(Ga3Sb2)x (x = 15, 30, 45, 60) photodetection sensor for optoelectronic applications. J Mater Sci: Mater Electron 33, 17939–17948 (2022). https://doi.org/10.1007/s10854-022-08656-1

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  • DOI: https://doi.org/10.1007/s10854-022-08656-1

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