Abstract
Carbon-based perovskite solar cells (C-PSCs) have been popular for achieving low-cost and stable photovoltaics. To overcome an obstacle of high-temperature annealing process for producing titanium dioxide (TiO2), CsPbI2Br C-PSCs based on a device structure of FTO/tin oxide (SnO2)/CsPbI2Br/carbon electrode can be fabricated at the low-temperature annealing process of 280 °C for 180 s, where SnO2 is used as the electron transporting layer (ETL). Experimental results showed that the suitable concentration of SnO2 ETL could yield smooth surface CsPbI2Br films with free-pinhole and larger grain-sized crystallization. In combination with prolonging annealing time, a champion power conversion efficiency of 9.68% with a larger open-circuit voltage (Voc) of 1.14 V was obtained for CsPbI2Br C-PSC based on SnO2 ETL. Here, a simple low-temperature fabricating process of SnO2 ETL can be adapted to flexible substrates for C-PSCs and furtherly reduce the manufacturing cost.
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Acknowledgements
This work was financially supported by the Major Foundation of Guangzhou Science and Technology (No. 201804020005), the Guangdong Natural Science Funds for Distinguished Young Scholars (No. 2015A030306041), the Tip-top Scientific and Technical Innovative Youth Talents of Guangdong Special Support Program (No. 2015TQ01N060), the Guangdong Innovative and Entrepreneurial Research Teams Program (2016ZT06C412), the National Key R&D Program of China, (No. 2020YFB0408100), the National Natural Science Foundation of China (NSFC, No.U20A20340), and the Hundred Talent Program of Guangdong University of Technology (220418095).
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XF: Conceptualization, Validation, Investigation, and Writing—Original Draft; KZ: Investigation and Data curation; YM: Conceptualization; YQ: Conceptualization, Supervision, Funding acquisition, Project administration, and Writing—review & editing.
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Fu, X., Zhou, K., Min, Y. et al. Significant efficiency enhancement of carbon-based CsPbI2Br perovskite solar cells enabled by optimizing tin oxide electron transport layer. J Mater Sci: Mater Electron 33, 17649–17659 (2022). https://doi.org/10.1007/s10854-022-08628-5
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DOI: https://doi.org/10.1007/s10854-022-08628-5