Abstract
Two-dimensional graphene oxide (GO) was coated on one-dimensional silicon nanowires (SiNWs) to form a GO/SiNWs heterojunction. SiNWs can be replaced with Si because SiNWs have better optical and electronic properties than bulk Si. The coating of crumpled and wrinkled sheets of GO on SiNWs was observed from FESEM images. The coating of GO also led to a decrease in the reflectance of light by SiNWs. The GO/SiNWs heterojunction improved the current–voltage characteristics compared to bare SiNWs. GO/SiNWs heterojunction showed an ideality factor of 1.42 and barrier height of 0.38 eV. A low value of leakage current (5.16 × 10−4 mA) was obtained for GO/SiNWs compared to bare SiNWs (1.63 × 10−3 mA).
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Acknowledgements
The authors acknowledge the Sophisticated Analytical Instrumentation Facility, IIT Bombay, for UV–Vis spectroscopy and Raman characterization facilities. The authors acknowledge the Center of Excellence in Advanced Materials, NIT Durgapur, for their help in acquiring FESEM images and XRD patterns. Lastly, the authors also thank the instrumentation facility, IIT Roorkee, for AFM images.
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We sincerely acknowledge UGC-DAE-CSR, Indore (ref:CSR-IC-MSR-07/CRS-215/2017-18/1296) for providing partial financial support to Miss Sadhna Rai.
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Ms. SR contributed to experimental design, performance, data analysis, and manuscript preparation. Dr. RB contributed to data analysis & data verification. Dr. MKM contributed to structural investigation and analysis. Dr. JB performed supervision and data analysis. Dr. BPS contributed to supervision, manuscript preparation, & verification.
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Rai, S., Bhujel, R., Mondal, M.K. et al. Investigation of optical and electrical properties of graphene oxide/silicon nanowires heterojunction. J Mater Sci: Mater Electron 33, 16501–16510 (2022). https://doi.org/10.1007/s10854-022-08540-y
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DOI: https://doi.org/10.1007/s10854-022-08540-y