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Evidence for negative differential resistance and switchable diode effect in multiferroic BiFe0.95Sc0.05O3-based resistive random access memory under doping engineering

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Abstract

This report explores the influence of scandium (Sc) doping on structural, optical, and resistive switching properties of multiferroic \(BiFe_{0.95}Sc_{0.05}O_3\) (BFS5O) thin-film. The as-grown spin-coated film exhibits unchanged crystal structure, i.e., rhombohedral, along with the appearance of a minor residual phase, confirms X-ray diffraction. Doping engineering distorts the \(FeO_6\) octahedron due to the tuning of lattice parameters manifest from the shifting of Raman phonon modes. The fabricated Au/BFS5O/FTO-resistive random access memory (RRAM) exhibits distinct bipolar resistive switching at a SET voltage (+1.75 V) and RESET voltage (-0.8 V) with significant endurance (ON/OFF ratio \(\sim 84\)) and retention over 100 multiple testing cycles. Doping induces a signature of negative differential resistance effect during the SET process. While achieving the LRS, the conduction process follows the well-known Ohmic and trap-controlled space charge-limited conduction mechanism. However, the HRS is completely dominated by Schottky barrier emission. It can be believed that the oxygen vacancies of BFS5O film under the electro-migration effect construct a metallic filament bridge responsible for achieving various resistive states under external voltage bias. The formation of Schottky contact near the Au/BFS5O interface indicates the device possibly achieves switchable diode effects.

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Data availability

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgements

HNM acknowledges IIT Hyderabad for providing research facilities and University Grants Commission (UGC, India) for providing financial support.

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Authors and Affiliations

  1. Nanomagnetism and Microscopy Laboratory, Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana, 502284, India

    Himadri Nandan Mohanty

  2. School of Applied Science, Centurion University of Technology & Management, Parlakhemundi, Odisha, 761211, Odisha, India

    S. Mishra

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  1. Himadri Nandan Mohanty
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The experiments are performed by HNM. Both HNM and SM explained the results.

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Correspondence to S. Mishra.

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Mohanty, H.N., Mishra, S. Evidence for negative differential resistance and switchable diode effect in multiferroic BiFe0.95Sc0.05O3-based resistive random access memory under doping engineering. J Mater Sci: Mater Electron 33, 15848–15857 (2022). https://doi.org/10.1007/s10854-022-08485-2

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