Abstract
The present work execute the deposition of CdO:ZnO composite thin films with varying compositions of 90:10, 80:20, 70:30, and 60:40 grown by Radio Frequency (RF) magnetron sputtering on glass substrates. The optoelectronic characteristics of the CdO:ZnO composite thin films and its dependence on variation in substrate temperature are discussed. Structural, electrical, morphological, and optical properties of CdO:ZnO were analyzed by X-ray Diffraction (XRD), Scanning Electron Microscope (SEM)-Energy Dispersive X-ray (EDX), Atomic Force Microscope (AFM), Hall Effect, UV–vis-NIR, and Photoluminescence (PL) spectroscopy. All films exhibited an average optical transmittance above 80% in the visible range regardless of the deposition temperature and composition. The CdO:ZnO (70:30) composite thin films deposited at 200 ºC possess the lowest electrical resistivity value of 1.91 × 10–4 with a high carrier concentration of 2.99 × 1020 cm−3. Upon increasing the substrate temperature from RT to 200 ºC, the carrier mobility value increases from 53 cm2 V−1S−1 to 130.40 cm2 V−1S−1. The energy band gap values of CdO:ZnO composite thin films have been calculated and discussed based on the transmittance spectra. It is confirmed that CdO:ZnO (70:30) composite thin films deposited with a substrate temperature of 200 ºC have good electrical and optical properties for potential applications as transparent electrodes in optoelectronic devices.
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Cheemadan, S., Kumar, M.C.S. Optoelectronic properties of transparent conducting CdO:ZnO composite thin films by RF-magnetron sputtering. J Mater Sci: Mater Electron 33, 15638–15651 (2022). https://doi.org/10.1007/s10854-022-08468-3
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DOI: https://doi.org/10.1007/s10854-022-08468-3