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Enhanced persistent luminescence of MgGa2O4:Cr3+ near-infrared phosphors by codoping Nb5+

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Abstract

Near-infrared (NIR) long persistent phosphors have potential applications in medical imaging, anti-counterfeiting signs, and night vision surveillance. It is very important to obtain NIR long persistent phosphors with bright intensity and longer persistent time. In this article, Nb5+ ions are introduced into the NIR phosphor MgGa2O4: Cr3+ and the luminescence properties are investigated. The phosphors exhibit NIR long persistent emission peaking at 706 nm. After codoping with Nb5+, the afterglow intensity is increased 4 times and the photoluminescence (PL) intensity is improved 2.34 times. Thermoluminescence tests demonstrate that the trap density can be enriched and the distribution of traps has been adjusted via codoping Nb5+. Therefore co-doping Nb5+ can significantly improve the afterglow performance. This article might provide reference for designing new near-infrared long persistent phosphors.

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The [DATA TYPE] data used to support the findings of this study are available from the corresponding author upon request.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (No. 51762010); the Introduced Talents Funds of Guizhou University (No. 2018-59); the Science and Technology Foundation of Guizhou Province (No. ZK[2021] yiban 328), and the Science Research Found of Guizhou Province, China (Grant No. 2014-7611).

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  1. Key Laboratory of Functional Composite Materials of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang, 550025, Guizhou, China

    Yamin Xu, Weichao Huang & Chaoyong Deng

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  1. Yamin Xu
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  2. Weichao Huang
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CD, WH: Financial support. WH: Suggestion, Guidance. YX: Investigation, Data curation, Data processing, Writing- Original draft preparation.

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Correspondence to Weichao Huang or Chaoyong Deng.

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Xu, Y., Huang, W. & Deng, C. Enhanced persistent luminescence of MgGa2O4:Cr3+ near-infrared phosphors by codoping Nb5+. J Mater Sci: Mater Electron 33, 5325–5334 (2022). https://doi.org/10.1007/s10854-022-07724-w

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