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Comparative study on IWO and ICO transparent conductive oxide films prepared by reactive plasma deposition for copper electroplated silicon heterojunction solar cell

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Abstract

Reactive plasma deposition (RPD) was utilized to prepare W-doped In2O3 (IWO) and Ce-doped In2O3 (ICO) transparent conductive oxide (TCO) films for fabricating the copper electroplated silicon heterojunction (C-HJT) solar cell. TCOs with high carrier mobility (μe) and low carrier concentration (Ne) are preferred for the solar cell to limit the photocurrent loss induced by the possible free carrier absorption in TCOs. The electrical and optical properties of the IWO and ICO films were optimized via adjusting the RPD process conditions. As a result, both IWO and ICO films presented higher μe and lower Ne than the Sn-doped In2O3 (ITO) control prepared by magnetron sputtering. Especially, the ICOs could achieve much higher μe. When an optimized ICO with μe of up to 101.7 cm2/V s was applied on the back side of the C-HJT solar cell, about 0.5% relative enhancement for the efficiency of the solar cell was achieved. The superior electrical and optical properties of ICO films are conducive to the improvement of cell efficiency.

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The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.

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Funding

This work was supported by the ‘‘Transformational Technologies for Clean Energy and Demonstration’’ Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDA21060500), the National Natural Science Foundation of China (Grant No. 61674151), Beijing Municipal Science and Technology Project (Grant No. Z201100004520003), National Natural Science Foundation of China (Grant No. 62104228), and the Institute of Electrical Engineering, CAS (Grant No. E1551401).

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Authors and Affiliations

  1. Key Laboratory of Solar Thermal Energy and Photovoltaic System of Chinese Academy of Sciences, Institute of Electrical Engineering Chinese Academy of Sciences, Beijing, 100190, China

    Huan Liu, Hongwei Diao, Xiaojie Jia, Lei Zhao & Wenjing Wang

  2. University of Chinese Academy of Sciences, Beijing, 100049, China

    Huan Liu, Lei Zhao & Wenjing Wang

  3. SPIC Central Research Institute, Beijing, 102209, China

    Yuanbo Gong, Wei Wang & Jun Zong

  4. Dalian National Laboratory for Clean Energy, The Chinese Academy of Sciences, Dalian, 116023, China

    Lei Zhao & Wenjing Wang

Authors
  1. Huan Liu
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  2. Yuanbo Gong
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  3. Hongwei Diao
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  4. Xiaojie Jia
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  5. Lei Zhao
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  6. Wenjing Wang
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  7. Wei Wang
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  8. Jun Zong
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Correspondence to Lei Zhao.

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Liu, H., Gong, Y., Diao, H. et al. Comparative study on IWO and ICO transparent conductive oxide films prepared by reactive plasma deposition for copper electroplated silicon heterojunction solar cell. J Mater Sci: Mater Electron 33, 5000–5008 (2022). https://doi.org/10.1007/s10854-021-07689-2

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