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Low pressure Cu-Cu bonding using MOD ink-modified Cu particle paste for die-attachment of power semiconductors

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Abstract

Cu-Cu bonding is always conducted at high temperature and high pressure in reductive atmosphere to eliminate the influence caused by oxidation. Herein, a novel low-pressure sinterable Cu nanoparticle (Cu-NPs) paste was developed using Cu Metal Organic Decomposition (MOD) ink as solvent and surface modifier. The Cu MOD ink in paste introduced in Cu nanoparticle paste not only eliminated the surface oxidation of Cu-NPs, but also modified Cu-NPs with Cu atoms due to the thermal decomposition during sintering process. As a result, robust Cu sinter joints for die-attachment could be realized at a low pressure of 0.4 MPa in non-reductive nitrogen atmosphere. Using the paste with 20 wt.% Cuf addition in solvent, a relative high shear strength of 17.1 MPa could be achieved at 300 °C, which is about 3.8 times higher than that sintered without MOD ink (4.5 MPa). When bonding temperature rose to 350 °C, even higher shear strength over 20 MPa was obtained. The bonding strength was comparable to the traditional Pb-5Sn solder alloy, promising its industrial potential.

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Author notes

  1. Yue Gao and Yu-bo Xiao have equally contributed to this work.

Authors and Affiliations

  1. Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China

    Yue Gao, Yu-bo Xiao, Zhi-Quan Liu & Rong Sun

  2. School of Material Science and Engineering, Harbin University of Science and Technology, Harbin, 150040, China

    Yu-bo Xiao & Yang Liu

  3. University of Chinese Academy of Sciences, Beijing, 100049, China

    Zhi-Quan Liu & Rong Sun

Authors
  1. Yue Gao
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  2. Yu-bo Xiao
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  3. Zhi-Quan Liu
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  4. Yang Liu
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Correspondence to Zhi-Quan Liu or Yang Liu.

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Gao, Y., Xiao, Yb., Liu, ZQ. et al. Low pressure Cu-Cu bonding using MOD ink-modified Cu particle paste for die-attachment of power semiconductors. J Mater Sci: Mater Electron 33, 3576–3585 (2022). https://doi.org/10.1007/s10854-021-07551-5

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  • DOI: https://doi.org/10.1007/s10854-021-07551-5

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