Abstract
Chemical vapor deposition (CVD) is a promising method for producing high-quality two-dimensional (2D) transition metal dichalcogenides (TMDs) over large area. In this paper, we report the effect of temperature on the shape evolution of monolayer-thick molybdenum disulfide (MoS2) grown by CVD on SiO2/Si substrate. As in our previous study (ref. 22), the substrate is placed slightly upstream to the Mo source on a barrier where the vapor concentration is optimum for a homogeneous MoS2 formation. Three distinct grain shapes (equilateral triangle, edge-curved triangle, and circle) evolved as a result of change in growth temperature from 725–775 °C. Circular MoS2 grains, emerged due to substrate (SiO2/Si) influence at a growth temperature of 775 °C, exhibited strong photoluminescence compared to other shapes. We also demonstrated formation of continuous monolayer MoS2 by prolonging the growth duration. The findings of the present study provide insight into the nucleation and growth kinetics of MoS2 on SiO2/Si substrate under the influence of growth temperature.
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Acknowledgements
The authors gratefully acknowledge financial support from the Science and Engineering Research Board, Department of Science and Technology, Government of India, under Research Grant No. CRG/2020/003902. The authors would like to thank SRM Institute of Science and Technology for the generous support to establish micro-Raman spectroscopy, Transmission Electron Microscopy (TEM), and Scanning Electron Microscopy (SEM) facilities.
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Ponnusamy, K., Durairaj, S. & Chandramohan, S. Effect of growth temperature on the morphology control and optical behavior of monolayer MoS2 on SiO2 substrate. J Mater Sci: Mater Electron 33, 9549–9557 (2022). https://doi.org/10.1007/s10854-021-07547-1
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DOI: https://doi.org/10.1007/s10854-021-07547-1