Abstract
TiN films were oxidized at different temperatures (300, 400, 500, and 600 °C) for different times (1, 10, 50, and100 h), and the effect of oxidation behavior on optical performance and infrared emissivity of TiN films was investigated. The results showed that TiN films were oxidized to the solid solution of TiON with the same crystal structure as TiN at 400 °C for 1 h. The films exhibited low reflectance and transmittance and the infrared emissivity changed little. With the extension of oxidation time, TiON gradually transformed into Ti2O3 and TiO2 and the infrared emissivity of the films went up. As the oxidation temperature rose above 500 °C, TiN films were oxidized quickly and the infrared emissivity increased to 0.8.
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Acknowledgements
This work was supported by the Scientific Research Program Funded by Education Department of Shaanxi Province (No. 20JK0650) and Shaanxi Provincial Science and Technology Department (No. 2020JQ-827).
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Lu, L., Xu, J., Liu, Y. et al. Effect of oxidation behavior on visible–infrared property of TiN films. J Mater Sci: Mater Electron 33, 3267–3274 (2022). https://doi.org/10.1007/s10854-021-07527-5
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DOI: https://doi.org/10.1007/s10854-021-07527-5