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Enhanced energy storage density of antiferroelectric AgNbO3-based ceramics by Bi/Ta modification at A/B sites

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Abstract

Dielectric capacitors have attracted extensive attention due to their high power density along with fast charge/discharge rate. Despite the high energy storage performance were obtained in lead-based ceramics, we still need to find lead-free ceramic alternatives considering the environmental requirements, and AgNbO3 has received extensive attention owing to its ferroelectric–antiferroelectric (FE–AFE) phase transition. In our study, the AFE properties of the samples were improved by tuning the grain size and polarizability of ions, and excellent energy storage performance was obtained in Bi/Ta co-doped AgNbO3. The BANT ceramic exhibited a remarkably enhanced recoverable energy density of 3.9 J/cm3 and acceptable efficiency of 61%. Morphological and structural analyses and electrical properties revealed that this co-substitution can optimize the AFE properties of the material, which can be demonstrated by the slim P–E loops and the reduced grain sizes. Of note, the BANT6 ceramic exhibited fast discharge speed accompanied by the actual energy storage density of up to 3.5 J/cm3 under 260 kV/cm. These findings indicate that AgNbO3-based AFE ceramics are a prospective alternative for energy storage materials applied to high-pulse-power fields.

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Data availability

The data that support the findings of this study are available from School of Materials, Guilin University of Electronic Science and Technology, but restrictions apply to the availability of these data, which were used under license for the current study, and so are not publicly available. Data are, however, available from the authors upon reasonable request and with permission of Pro. Changlai Yuan.

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Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Grant No. 11464006) and Guangxi Key Laboratory of Information Materials (Grant No. 191026–Z).

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Authors and Affiliations

  1. College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, People’s Republic of China

    Dapeng Yang, Yuchen Lan, Changlai Yuan, Huihuang Lai, Baohua Zhu, Liufang Meng, Changrong Zhou, Jiwen Xu, Jiang Wang & Guanghui Rao

  2. Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin, 541004, People’s Republic of China

    Changlai Yuan, Baohua Zhu & Guanghui Rao

  3. Guangxi Key Laboratory of Processing for Non-Ferrous Metallic and Featured Materials & MOE Key Laboratory of New Processing Technology for Non-Ferrous Metals and Materials, School of Resources, Environment and Materials, Guangxi University, Nanning, 530004, People’s Republic of China

    Junlin Wu & Qin Feng

  4. Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, People’s Republic of China

    Guanghui Rao

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  1. Dapeng Yang
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  2. Yuchen Lan
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Correspondence to Changlai Yuan, Baohua Zhu or Guanghui Rao.

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Yang, D., Lan, Y., Yuan, C. et al. Enhanced energy storage density of antiferroelectric AgNbO3-based ceramics by Bi/Ta modification at A/B sites. J Mater Sci: Mater Electron 33, 3081–3090 (2022). https://doi.org/10.1007/s10854-021-07511-z

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