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Synthesis of CdZnS buffer layer and its impact on Cu2ZnSn(S, Se)4 thin film solar cells

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Abstract

CdZnS thin films with low zinc content were deposited by a chemical bath deposition method. The structural and the optical properties of the films were investigated. Results show that the films are hexagonal cubic structure with strong preferential (002) orientation. The XRD and Raman peaks shift that indicate the decreasing lattice space is due to the smaller radius of Zn compared to that of Cd. The optical absorption spectra reveal that the bandgap for the CdZnS thin films is bigger than that of the pure CdS thin film. The increased bandgap may have been due to possible increase in the conduction band minimum of the CdS. This result indicates the CdZnS thin films may be more suitable for the application in kesterite solar cells. Finally, the performance of CZTSSe solar cells with CdZnS buffer layer was investigated and a power conversion efficiency of 8.5% was obtained.

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 1216040205, 11864035), CAS “Light of West China” Program, and Support Program for Longyuan Youth and Fundamental Research Funds for the Universities of Gansu Province, the Scientific Research Projects of Gansu Colleges and Universities (Grant No. 2021A-003), the Foundation of Northwest Normal University of China (Grant No. NWNU-LKQN2021-33).

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Authors and Affiliations

  1. Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou, 730070, China

    Xuqiang Zhang, Jiangtao Chen, Jianbiao Chen, Lin Ge, Yan Li, Yun Zhao & Chengwei Wang

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  1. Xuqiang Zhang
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  2. Jiangtao Chen
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  3. Jianbiao Chen
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  5. Yan Li
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Correspondence to Yun Zhao or Chengwei Wang.

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Zhang, X., Chen, J., Chen, J. et al. Synthesis of CdZnS buffer layer and its impact on Cu2ZnSn(S, Se)4 thin film solar cells. J Mater Sci: Mater Electron 33, 2399–2405 (2022). https://doi.org/10.1007/s10854-021-07446-5

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