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Fabrication of high-performance ZnO-based thin-film transistors by Mg/H co-doping at room temperature

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Abstract

We fabricated thin-film transistors (Mg0.06Zn0.94O:H-TFTs) in an argon and hydrogen (Ar + H2) atmosphere by magnetron sputtering using Mg0.06Zn0.94O as the target material without heating the P++–Si/SiO2 substrate. We studied the influence of Mg/H co-doping on film properties and device performance. Mg doping of the ZnO film increases the formation energy of oxygen vacancies and reduces that of interstitial hydrogen, whereas H doping acts as a shallow donor and passivates oxygen-related defects. On the one hand, the combined effect of the dopants modulated the carrier concentration of the film. On the other hand, the scattering of electrons by the interface trap states in the channel layer reduced, thereby improving the TFT performance. At H2/(Ar + H2) = 0.39%, the overall performance of Mg0.06Zn0.94O:H-TFT is the best, with a saturation mobility of 8.11 cm2/Vs, an on/off-current ratio of 6.17 × 106, a threshold voltage of 2.78 V and a subthreshold swing of 0.42 V/Dec, and the positive and negative bias stress stability values are 0.61 and − 1.02 V, respectively. Besides, all features are significantly improved compared with those of ZnO-TFT. The simple fabrication of high-performance Mg0.06Zn0.94O:H-TFTs under substrate at room temperature can promote ZnO-based TFT application in flexible electronics.

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Acknowledgements

This work is supported by the National Natural Science Foundation of China (Grant Nos. 12074263, 61704111, 11774241, 51872187 and 21805194) and the Science and Technology Foundation of Shenzhen (Grant Nos. JCYJ20180508163404043 and JCYJ20170818143417082).

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Authors and Affiliations

  1. College of Materials Science and Engineering, Shenzhen University, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen, 518000, China

    Zongjin Jiang, Dongbo Yin, Deliang Zhu, Wangying Xu, Shun Han, Ming Fang, Wenjun Liu, Peijiang Cao, Xinke Liu & Youming Lu

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  1. Zongjin Jiang
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  2. Dongbo Yin
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  3. Deliang Zhu
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Jiang, Z., Yin, D., Zhu, D. et al. Fabrication of high-performance ZnO-based thin-film transistors by Mg/H co-doping at room temperature. J Mater Sci: Mater Electron 33, 2080–2089 (2022). https://doi.org/10.1007/s10854-021-07412-1

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