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Morphological, optical, and electrical characterizations and cryogenic reliability tests on AlInGaP red light emitting diodes immersed in liquid nitrogen

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Abstract

Cryogenic tests on AlInGaP light emitting diodes (LEDs) were performed by placing LEDs in liquid nitrogen (LN2). To study the optical and electrical variations on the devices, optical and electrical measurements were conducted. Results indicate that red and blue shifts in spectra, negative resistance and drastic current drops in electrical characteristics were found during the LN2 cooling process. Moreover, focus ion beam was used to cut the devices and scanning electron microscopy and transmission electron microscope images were taken to study the changes. The analyses show that thermal expansion and cooling shrinkage may cause distortions on LED nanostructures and damage the device. The cooling LED reliability tests show promise on examination of LED devices for aeronautical and space technology applications.

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Funding

The funder was funded by Ministry of Science and Technology, Taiwan, Grant No (107-2221-E-260-015-MY3).

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Authors and Affiliations

  1. Department of Electro-Optical Engineering, Minghsin University of Science, Xinfeng, Taiwan, ROC

    Ming-Ling Lee

  2. Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli Township, Taiwan, ROC

    Pei-Shu Hsieh, Cheng-Shan Chen, Hao-Zhu Zhang, Po-Yuan Chen, Chun-Yen Yang, Ming-Jhe Wu & Hsiang Chen

  3. Department of Materials Science and Engineering, National Chung Hsing University, Taichung, 402, Taiwan, ROC

    Chia-Feng Lin

  4. Tekcore CO.LTD, Nantou, Taiwan, ROC

    Hai-Wen Hsu

  5. Department of Applied Chemistry, National Chi Nan University, Puli Township, Taiwan, ROC

    Ming-Yu Kuo

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  1. Ming-Ling Lee
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Correspondence to Hsiang Chen.

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Lee, ML., Hsieh, PS., Chen, CS. et al. Morphological, optical, and electrical characterizations and cryogenic reliability tests on AlInGaP red light emitting diodes immersed in liquid nitrogen. J Mater Sci: Mater Electron 32, 28287–28296 (2021). https://doi.org/10.1007/s10854-021-07205-6

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  • DOI: https://doi.org/10.1007/s10854-021-07205-6

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