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Scaling behavior of dynamic hysteresis in multiferroic Bi5FeTi3O15 thin films

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Abstract

In this study, Bi5FeTi3O15 (BFTO) thin films were obtained on silicon wafers using a sol–gel process. Advanced multiferroic properties, with a remnant polarization Pr of ~ 28 µC/cm2 and a saturated magnetization Ms of ~ 1.4 emu/cm3, were observed in a sample. The scaling of the dynamic ferroelectric hysteresis as a function of the magnitude E0 and the frequency f of an applied electrical field was investigated. The scaling relationship of the P−E loops was found to take the form 〈A〉 ∝ f−0.19E04.47 at low E0 and 〈A〉 ∝ f−0.05E01.26 at high E0. The exponents of the scaling that domain reversal in the BFTO thin films is insensitive to f at both low and high E0. This indicates the extensive potential applications of BFTO thin films in multi-state storage.

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Acknowledgements

This work was supported by the National Science Foundation of China (11374169), the Natural Science Foundation of Shandong Province (ZR2019MA004), Distinguished Middle-Aged and Young Scientist Encourage and Reward Foundation of Shandong Province (BS2014DX014), (Research and Innovation Team on Materials Modification and Optoelectronic Devices at extreme conditions), and Shandong Provincial Key Research and Development Program (Public Welfare Science and Technology Research) (No. 2019GGX103010).

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Authors and Affiliations

  1. School of Science, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China

    Yongtao Li, Hongguang Zhang, Xuemin He & Liqing Liu

  2. School of Electronic and Information Engineering, Qingdao University, Qingdao, 266071, China

    Zhaoyang Li, Xiaosong Wang, Jie Su & Zongtao Chi

  3. College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China

    Yongtao Li

  4. New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing, 210023, China

    Yongtao Li

  5. Shandong Provinical Key Laboratory of Optical Communication Science and Technology, School of Physical Science and Information Technology, Liaocheng University, Liaocheng, 252000, China

    Hengshuai Li

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  1. Yongtao Li
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Li, Y., Li, Z., Wang, X. et al. Scaling behavior of dynamic hysteresis in multiferroic Bi5FeTi3O15 thin films. J Mater Sci: Mater Electron 32, 27333–27338 (2021). https://doi.org/10.1007/s10854-021-07103-x

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  • DOI: https://doi.org/10.1007/s10854-021-07103-x

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