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Thermal stability issue of ultrathin Ti-based silicide for its application in prospective DRAM peripheral 3D FinFET transistors

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Abstract

In this work, the thermal stability issue of ultrathin Ti-based silicide (TiSix) in prospective dynamic random access memory (DRAM) peripheral 3D FinFET transistors was systematically studied. As-prepared TiSix/n+-Si contacts and ultrathin TiSix films with different annealing temperatures, were characterized by means of specific contact resistivity (ρc), sheet resistance measurement, X-ray diffraction (XRD), transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDX). It is shown that the specific contact resistivity (ρc) for TiSix/n+-Si contacts gradually degrades with the increase of annealing temperature in the range 450–900 °C. In addition, it is revealed that though thick TiSi2 is conventionally known as thermal stable silicide, the agglomeration of ultrathin TiSix in the source/drain regions of 3D FinFETs still occurs after DRAM annealing typically at 750 °C for few hours. This agglomeration is thought to be responsible for the deterioration of ρc for TiSix/n+-Si contacts.

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Acknowledgements

This work was supported in part by the National Key Project of Science and Technology of China under Grant 2017ZX02315001-002, in part by the CAS Pioneer Hundred Talents Program, the Youth Innovation Promotion Association of CAS under Grant Y201926, in part by the opening projects of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences.

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Authors and Affiliations

  1. Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People’s Republic of China

    Yaodong Liu, Jing Xu, Jianfeng Gao, Jinbiao Liu, Dan Zhang, Xuebing Zhou, Xianglie Sun, Yongliang Li, Junfeng Li, Wenwu Wang, Dapeng Chen, Tianchun Ye & Jun Luo

  2. University of Chinese Academy of Sciences (UCAS), Beijing, 100049, People’s Republic of China

    Yaodong Liu, Dan Zhang, Xuebing Zhou, Xianglie Sun, Chao Zhao, Wenwu Wang, Dapeng Chen, Tianchun Ye & Jun Luo

  3. Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou, 510535, Guangdong, People’s Republic of China

    Jun Luo

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  1. Yaodong Liu
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Liu, Y., Xu, J., Gao, J. et al. Thermal stability issue of ultrathin Ti-based silicide for its application in prospective DRAM peripheral 3D FinFET transistors. J Mater Sci: Mater Electron 32, 24107–24114 (2021). https://doi.org/10.1007/s10854-021-06874-7

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