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Structural and electrical properties of epitaxial SnO2: Sb films deposited on 6 H-SiC by MOCVD

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Abstract

Sb-doped tin oxides (SnO2:Sb) films had been epitaxially grown on 6 H-SiC by metal organic chemical vapour deposit (MOCVD) technology. The Structural and electrical properties of the films were investigated in detail. The obtained SnO2:Sb films have a rutile crystal structure with (100) oriented. The SnO2 with 3 % Sb-doping film had a lowest resistivity of 9.3 × 10− 4Ω·cm and a highest carrier concentration of 3.4 × 1020 cm3. The electrical properties of SnO2:Sb films from room temperature to 10 K with different Sb-doping concentrations were studied well in order to reveal the transport mechanism. Taking the temperature of 150 K as the dividing line, the film were dominated by ion scattering and lattice vibration scattering.

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Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (No. 50872073).

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Authors and Affiliations

  1. School of Microelectronics, Shandong University, Jinan, 250100, PR China

    Caina Luan

  2. Shandong Huaguang Optoelectronics Co., LTD, Jinan, PR China

    Zhen Zhu

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  1. Caina Luan
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  2. Zhen Zhu
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Correspondence to Caina Luan.

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Luan, C., Zhu, Z. Structural and electrical properties of epitaxial SnO2: Sb films deposited on 6 H-SiC by MOCVD. J Mater Sci: Mater Electron 32, 21798–21803 (2021). https://doi.org/10.1007/s10854-021-06701-z

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  • DOI: https://doi.org/10.1007/s10854-021-06701-z

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