High thermal stability of BaTi_0.93Sn_0.07O₃ perovskite for capacitor applications

Abstract

Recently, tremendous progress in the development of dielectric capacitors for temperature-based electronic applications has been observed. The development of lead-free ceramics with high dielectric constant, low dielectric loss, and thermal stability over a wide temperature range is yet a big concern of researchers. In the present work, lead-free BaTi_0.93Sn_0.07O₃ bulk ceramics of an average grain size of 0.98 μm are prepared using the conventional solid-state reaction method. Rietveld analysis of XRD pattern suggests the formation of a single-phase tetragonal perovskite structure of BaTi_0.93Sn_0.07O₃. The dielectric constant increases substantially, from room temperature (RT) to high temperature, i.e., up to 110 °C. Besides, the relative thermal stability of dielectric constant (TCC ≤ 30%) together with an ultra-low dielectric loss (tanδ ≤ 0.06) is achieved for the BaTi_0.93Sn_0.07O₃ ceramics at 1 kHz in the temperature range from RT to 110 °C. A detailed analysis of BaTi_0.93Sn_0.07O₃ ceramics is done with modulus, complex impedance spectroscopy, and conductivity studies. The outstanding stability of the dielectric properties is observed over a wide range of temperatures makes BaTi_0.93Sn_0.07O₃ ceramics a promising material for the next generation’s high-performance capacitors.