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Study on resistance switching characteristics and regulation mechanisms of Bi0.9Er0.1Fe0.99Mn0.01O3/Zn1−xCuxO thin films

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Abstract

The carrier transport, ferroelectric and resistance switching properties of Bi0.9Er0.1Fe0.99Mn0.01O3/Zn1−xCuxO (BEFM/ZCuxO, x = 0.00–0.09) composite films were studied to elucidate the correlation between ferroelectricity and resistance switching and the formation mechanism of resistance switching behavior. BEFM/ZCuxO films are a combination of bulk conduction and interfacial conduction, and interface conduction is dominant. The BEFM/ZnO thin film exhibits a rectifying diode effect, and BEFM can regulate the carrier transport at the interface through ferroelectric polarization to achieve the regulation of resistance state. However, the ferroelectricity of the BEFM/ZCuxO composite films has almost disappeared, and its resistance switching behavior can be achieved by adjusting the change of the interface barrier through the transport of oxygen vacancies. The resistance switching effect of BEFM/ZCuxO composite films may have potential applications in the field of non-volatile storage and multifunction storage.

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Acknowledgements

This work is supported by the Shaanxi Province Key Research and Development Plan (2018GY-107); the Project of the National Natural Science Foundation of China (51372145); Natural Science Basic Research Plan in Shaanxi Province of China (2020JQ-730); the Graduate Innovation Fund of Shaanxi University of Science &Technology (SUST-A04).

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Authors and Affiliations

  1. Shaanxi Key Laboratory of Green Preparation and Functionalization for Inorganic Materials, School of Materials Science and Engineering, Shaanxi University of Science and Technology, Xi’an, 710021, Shaanxi, China

    Yun Liu, Guoqiang Tan, Xixi Ren, Jincheng Li & Ao Xia

  2. School of Arts and Sciences, Shaanxi University of Science and Technology, Xi’an, 710021, Shaanxi, China

    Huijun Ren

  3. School of Electronic Information and Artificial Intelligence, Shaanxi University of Science and Technology, Xi’an, 710021, Shaanxi, China

    Wenlong Liu

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  1. Yun Liu
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Correspondence to Yun Liu.

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Liu, Y., Tan, G., Ren, X. et al. Study on resistance switching characteristics and regulation mechanisms of Bi0.9Er0.1Fe0.99Mn0.01O3/Zn1−xCuxO thin films. J Mater Sci: Mater Electron 32, 18699–18710 (2021). https://doi.org/10.1007/s10854-021-06384-6

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