Abstract
A series of green light-emitting Ba5Zn4Y8O21:Er3+ nanophosphors were prepared via single-step solution combustion process. PXRD-Rietveld investigation revealed that Er3+ ions are well-substituted Y3+ ions and no major change was observed in the crystalline structure of pure host matrix. Tetragonal nanoparticles with almost no agglomeration were revealed by morphological analysis. Different elements present in the prepared nanomaterials were elucidated via EDAX mapping. Photoluminescence investigation of Ba5Zn4Y8O21:Er3+ nanophosphors displayed an intense green emission peak of Er3+ ions credited to 4S3/2 → 4I15/2 transition, under NUV excitation of 379 nm. The concentration quenching occurred after 2.0 mol% concentration of the Er3+ ions in Ba5Zn4Y8O21 host, thus apprehended it an optimized concentration. CIE coordinates (x, y) of all the prepared nanocrystalline phosphors lied in the green region. Bandgap (Egap) values of the optimized sample were calculated by analysing the DR spectra of that sample which are found to be 4.0 eV for the pure host and 3.9 eV for the doped sample which lie in semiconductor range. The brief description of all these results proves the importance of synthesized nanophosphors in R-G-B (red–green–blue) PC white light-emitting diodes (WLEDs).
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Acknowledgements
One of the authors, Ms Monika Sheoran, appreciatively evinces her gratitude to the Council of Scientific and Industrial Research (CSIR), New Delhi, India for rendering support economically in the form of junior research fellowship (JRF) (Award No. 09/382(0216)/2018-EMR-1) to consummate this research work.
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MS: Conceptualization, methodology, software, writing—original draft preparation. PS: Data curation, visualization, software, writing—reviewing and editing. MK, NK: software, validation. VBT, SPK: Investigation. RKM: Supervision.
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Sheoran, M., Sehrawat, P., Kumar, M. et al. Synthesis and crystal structural analysis of a green light-emitting Ba5Zn4Y8O21:Er3+ nanophosphor for PC-WLEDs applications. J Mater Sci: Mater Electron 32, 11683–11694 (2021). https://doi.org/10.1007/s10854-021-05787-9
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DOI: https://doi.org/10.1007/s10854-021-05787-9