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Inorganic and lead-free CsBi3I10 thin-film solar cell prepared by single-source thermal evaporation

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Abstract

All inorganic lead-free halide perovskites have attracted much attention due to their non-toxic and suitable bandgap. In this paper, we first prepared all inorganic lead-free perovskite CsBi3I10 thin-films by single-source thermal evaporation deposition. The results show that CsBi3I10 thin films prepared by single-source thermal evaporation have layered structure, high purity hexagonal phase and high crystallinity, which are consistent with the theoretical calculation results. The surface of the thin film was compact and uniform, and had high homology with the crystal structure of the evaporation source material. After annealing, the crystallinity of the film was further improved. The photovoltaic conversion efficiency of perovskite solar cells based on the CsBi3I10 thin film is as high as 0.84%. These results indicate that the proposed single-source thermal evaporation method has the potential to prepare high efficiency inorganic lead-free perovskite solar cells.

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Acknowledgements

This work was supported by National Natural Science Foundation of China (No. 62074102) China, Key Project of Department of Education of Guangdong Province (No. 2018KZDXM059) China, Science and Technology plan project of Shenzhen (No. JCYJ20190808153409238 and No. JCY2018030512430951) China, Shenzhen Key Lab Fund (No. ZDSYS 20170228105421966) China, Self-made experimental equipment project fund of Shenzhen Technology University.

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  1. Physics Teaching and Experiment Center, Shenzhen Technology University, Shenzhen, 518118, China

    Huabin Lan

  2. Shenzhen Key Laboratory of Advanced Thin Films and Applications, Shenzhen University, Shenzhen, 518060, China

    Xingye Chen, Ping Fan & Guangxing Liang

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  1. Huabin Lan
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Correspondence to Huabin Lan or Guangxing Liang.

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Lan, H., Chen, X., Fan, P. et al. Inorganic and lead-free CsBi3I10 thin-film solar cell prepared by single-source thermal evaporation. J Mater Sci: Mater Electron 32, 11183–11192 (2021). https://doi.org/10.1007/s10854-021-05783-z

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