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Enhancing the light absorptance of stain-etched black silicon decorated by TiN nanoparticles

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Abstract

Due to the high energy, narrow distribution and breaking through the absorption limitation, plasmon-induced hot electrons have been widely applied to extend the photoresponse spectra of the semiconductor. In order to further enhance the resonance effect of local plasmon based on metallic nanostructures, we used hydrofluoric stain etching method to fabricate nanostructured black silicon (BSi) and deposited titanium nitride (TiN) nanoparticles on its surface by reactive magnetron sputtering. The results show that the BSi modified by plasmonic TiN nanoparticles has higher absorption in wavelength range from 1100 to 2500 nm compared to that of conventional acid etching of BSi. A PIN photoelectronic detector fabricated by the proposed BSi shows excellent device performance with responsivity of 0.45A/W at 1060 nm in near-infrared band.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant No.61734002, 61435010, 61177035 and 61421002). The author would like to thank State Key Laboratory of Electronic Thin Films and Integrated Devices in China for the help and equipment support.

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Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China

    Kaiqiang Wang, Shuang Liu, Jiacheng Li, Shenglan Wu, Jiankai Xia, Jinping Chen, Chunhui Tian, Yong Liu & Zhiyong Zhong

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  1. Kaiqiang Wang
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  2. Shuang Liu
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  3. Jiacheng Li
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  4. Shenglan Wu
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  7. Chunhui Tian
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  8. Yong Liu
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  9. Zhiyong Zhong
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Correspondence to Shuang Liu.

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Wang, K., Liu, S., Li, J. et al. Enhancing the light absorptance of stain-etched black silicon decorated by TiN nanoparticles. J Mater Sci: Mater Electron 32, 11503–11510 (2021). https://doi.org/10.1007/s10854-021-05724-w

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  • DOI: https://doi.org/10.1007/s10854-021-05724-w

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