Abstract
In this study, the mechanical and electrical properties of Zn–Sb thin films with different Zn contents were focused; the corresponding improvement mechanism is also discussed. It is found that the maximum phase transition temperature of the film is 250 °C when the Zn content is about 50 at%. The crystallization activation energy of the film also reached a maximum of 4.549 eV. The micro-structure analysis result of these annealed films through XRD showed that when the Zn content is less than 50 at.%, the Sb crystallization firstly reduces the amorphous thermal stability of the material, while the film with the highest crystallization activation energy forms the ZnSb phase. Besides, adding N element greatly increases the resistance ratio of the film before and after the phase change and the phase change temperature point, the maximum temperature reaches 265 °C, and the resistance ratio reaches 104 orders of magnitude. The doping of N also increases the density of the deposited film. When the N content is less, some N elements fill the defects caused by physical deposition, increase the density of the film, and increase the phase transition temperature of the film. The N atoms in the film are more likely to bond with Zn when N content is high, forming a Zn–N bond, and even forming a Zn3N2 phase, so that the phase transition temperature of the film is lowered.
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References
R. Bez, E. Camerlenghi, A. Modelli et al., Introduction to flash memory. Proc. IEEE 91(4), 489–502 (2003)
S.K. Lai, Flash memories: successes and challenges. IBM J. Res. Dev. 52(5), 529–535 (2008)
Y. Zhang, S. Swanson, A study of application performance with non-volatile main memory, in 31st Symposium on Mass Storage Systems and Technologies (MSST) (IEEE, Santa Clara, 2015), p. 1–10.
R.C. Sousa, I.L. Prejbeanu, Non-volatile magnetic random access memories (MRAM). C R Phys. 6(9), 1013–1021 (2005)
A. Kostrov, V. Stempitsky, Nonvolatile memory based on magnetic tunnel junction, in Advanced Technologies for Communications (ATC) (IEEE, Hanoi, Vietnam, 2012), p. 9–13.
F. Pan, S. Gao, C. Chen et al., Recent progress in resistive random access memories: materials, switching mechanisms, and performance. Mater. Sci. Eng. R Rep. 83(1), 1–59 (2014)
T.C. Chang, K.C. Chang, T.M. Tsai et al., Resistance random access memory. Mater. Today 19(5), 254–264 (2016)
J. Maimon, K. Hunt, J. Rodgers, Results of radiation effects (chk 14 & 16 duplicate raise query) on a chalcogenide non-volatile memory array, in Aerospace Conference et al 2004 Proceedings (IEEE, Big Sky, MT, USA, 2004) p. 2306–2315
M.H. Jang, S.J. Park, S.J. Park et al., The origin of the resistance change in GeSbTe films. Appl. Phys. Lett. 97(15), 152–163 (2010)
Y. Xie, Modeling, architecture, and applications for emerging memory technologies. IEEE Des. Test Comput. 28(1), 44–51 (2011)
S. Raoux, W. Wełnic, D. Ielmini, Phase change materials and their application to nonvolatile memories. Chem. Rev. 110(1), 240–267 (2009)
J. Orava, A.L. Greer, Chalcogenides for phase-change memory. Handb. Therm. Anal. Calorim. 6(1), 685–734 (2018)
D. Ielmini, A.L. Lacaita, Phase change materials in non-volatile storage. Mater. Today 14(12), 600–607 (2011)
X. Zhou, L. Wu, Z. Song et al., Nitrogen-doped Sb-rich Si-Sb-Te phase-change material for high-performance phase-change memory. Acta Mater. 61(19), 7324–7333 (2013)
Y. Yin, S. Morioka, S. Kozaki et al., Oxygen-doped Sb2Te3 for high-performance phase-change memory. Appl. Surf. Sci. 349(1), 230–234 (2015)
C. Peng, L. Wu, Z. Song et al., Performance improvement of Sb2Te3 phase change material by Al doping. Appl. Surf. Sci. 257(24), 10667–10670 (2011)
X. Shen, J. Li, G. Wang et al., Fast crystallization of Mg-doped Sb4Te for phase change memory. Vacuum 112(1), 33–37 (2015)
P.C. Chang, H.W. Huang, C.C. Chang et al., Ga19Sb81 film for multi-level phase-change memory. Thin Solid Films 544(1), 107–111 (2013)
C.C. Chang, C.Y. Hung, K.F. Kao et al., Phase transformation in Mg-Sb thin films. Thin Solid Films 518(24), 7403–7406 (2010)
Y. Chen, G. Wang, X. Shen et al., Crystallization behaviors of ZnxSb100-x thin films for ultralong data retention phase change memory applications. Cryst. Eng. Commun. 16(5), 757–762 (2014)
C.C. Chang, C.T. Lin, P.C. Chang et al., Phase stability, bonding and electrical conduction of amorphous carbon-added Sb films. Scripta Mater. 65(11), 950–953 (2011)
X.F. Zhu, The effect of preparation process on the structure and optical waveguide characteristics of zinc nitride thin films (Shandong Jianzhu University, 2017).
F. Rao, K. Ding, Y. Zhou et al., Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing. Science 358(6369), 1423–1427 (2017)
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Li, X., Zhou, X., Du, L. et al. Preparation and modification of ZnSb-based phase change storage films. J Mater Sci: Mater Electron 32, 8503–8513 (2021). https://doi.org/10.1007/s10854-021-05472-x
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DOI: https://doi.org/10.1007/s10854-021-05472-x