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Characteristic of As3Se4-based ovonic threshold switching device

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Abstract

Ovonic threshold switching (OTS) selector has gained lots of attention due to its potential for realization of large density 3-dimensional (3D) stacking memory. In this letter, binary OTS material As3Se4 has been demonstrated with excellent performance. The OTS material showed outstanding selector performance such as large on-state current (5 mA) and low off-state current (~ 1nA), resulting in a large selectivity of 106. The device endurance can reach 2 × 106 times. The ON/OFF switching speed is 12/150 ns, respectively. The bandgap of the amorphous As3Se4 is about 1.55 eV. Combining the X-ray photoelectron spectroscopy and Raman results we found that the main structure motifs are AsSe3 pyramidal and As4Se3 in the amorphous As3Se4 film. The As3Se4 can be used as a base material for OTS device.

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Data availability

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgements

This work was supported by the National Key Research and Development Program of China (2018YFB0407500, 2017YFA0206101), Strategic Priority Research Program of the Chinese Academy of Sciences (XDB44010200), National Natural Science Foundation of China (91964204, 61874129, 61874178), Science and Technology Council of Shanghai (20501120300, 18DZ2272800), Shanghai Sailing Program (19YF1456100), fund of the State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals, and Genetic Engineering of Precious Metal Materials in Yunnan Province (I)-Construction and Application of Precious Metal Materials Professional Database (I) (202002AB080001-1).

Funding

This work was supported by the National Key Research and Development Program of China (2018YFB0407500, 2017YFA0206101), Strategic Priority Research Program of the Chinese Academy of Sciences (XDB44010200), National Natural Science Foundation of China (91964204, 61874129, 61874178), Science and Technology Council of Shanghai (20501120300, 18DZ2272800), Shanghai Sailing Program (19YF1456100), fund of the State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals, and Genetic Engineering of Precious Metal Materials in Yunnan Province (I)-Construction and Application of Precious Metal Materials Professional Database (I) (202002AB080001-1).

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Authors and Affiliations

  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China

    Zhenhui Yuan, Xiaodan Li, Hao Wang, Yuan Xue, Sannian Song & Zhitang Song

  2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China

    Zhenhui Yuan, Xiaodan Li, Sannian Song & Zhitang Song

  3. ULVAC Research Center Suzhou Co., Ltd, Suzhou, 215026, China

    Shuaishuai Zhu, Gang Han, Bingjun Yang & Koukou Suu

  4. ULVAC, Inc, Kanagawa, 253-8543, Japan

    Takehito Jimbo & Koukou Suu

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  1. Zhenhui Yuan
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  2. Xiaodan Li
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  3. Hao Wang
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  4. Yuan Xue
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Correspondence to Sannian Song or Zhitang Song.

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Yuan, Z., Li, X., Wang, H. et al. Characteristic of As3Se4-based ovonic threshold switching device. J Mater Sci: Mater Electron 32, 7209–7214 (2021). https://doi.org/10.1007/s10854-021-05429-0

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