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Effect of Na doping on structural, optical, and dielectric properties of SnSe polycrystals

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Abstract

Recently, tin selenide has attracted vast research interest in many fields due to its unique properties. Here, Na-doped SnSe polycrystals were successfully synthesized using hydrothermal method. Single phase was exhibited by all the samples as revealed from X-ray diffraction (XRD). Scanning electron microscope (SEM) studies for undoped SnSe showed a 2D plate-like morphology and converted it into 3D flower-like morphology with increasing Na concentration. The optical bandgap values obtained using UV–VIS–NIR diffuse reflectance spectroscopy were found to decrease with increasing Na concentration. Dielectric and electrical modulus studies were carried out in the frequency range from 100 Hz to 10 MHz for temperatures from 323 to 523 K. Correlated barrier hopping (CBH) is a probable mechanism for the charge carriers in all the compositions of NaxSn1−xSe. The electrical modulus studies indicated an incomplete dielectric relaxation of the non-Debye type. The high values of the real part of permittivity and AC conductivity for the Na0.20Sn0.80Se sample have potential applications as capacitive energy-storage devices.

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Acknowledgements

The authors N. Manjula and B. Sobha would like to acknowledge the Director, ARCI, Hyderabad, for the support in dielectric measurements and the Centre for Automation and Instrumentation (CAI), National Institute of Technology, Warangal, for providing characterization facilities.

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Authors and Affiliations

  1. Department of Physics, National Institute of Technology, Warangal, Telangana, India

    Manjula Nerella & Sobha Bathulapalli

  2. International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Balapur, Hyderabad, Telangana, India

    Madireddy Buchi Suresh

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  1. Manjula Nerella
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Correspondence to Sobha Bathulapalli.

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Nerella, M., Suresh, M.B. & Bathulapalli, S. Effect of Na doping on structural, optical, and dielectric properties of SnSe polycrystals. J Mater Sci: Mater Electron 32, 4347–4362 (2021). https://doi.org/10.1007/s10854-020-05177-7

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  • DOI: https://doi.org/10.1007/s10854-020-05177-7

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