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Charge trapping characteristics of sputter-AlOx/ALD Al2O3/Epitaxial-GaAs-based non-volatile memory

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Abstract

In this work, a novel memory capacitor structure has been presented with AlOx/Al2O3 bilayer dielectrics on high mobility Epitaxial-GaAs substrate. We have demonstrated the chemical and electrical properties of metal–electrode/AlOx/Al2O3/epi-GaAs-based memory device in detail. Sputter-grown non-stoichiometric AlOx has been used for both the charge trapping layer and blocking layer due to its intrinsic charge trapping capability and high bandgap. Ultra-thin tunneling layer of thicknesses 5 nm and 15 nm were prepared by atomic layer deposition technique and memory properties were compared on promising high mobility Epitaxial-GaAs/Ge heterostructure. The proposed device shows excellent charge trapping properties with a maximum memory window of 3.2 V at sweep voltage of ± 5 V, with good endurance and data retention properties. Oxygen-deficient AlOx layer acted as a charge trapping layer without any additional blocking layer which is impressive for non-volatile memory application on high mobility epi-GaAs substrate. In addition, density Functional Theory (DFT) has been employed to understand the physical origin of the intrinsic charge trapping defects in AlOx dielectric layer.

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Authors and Affiliations

  1. School of Electronics Engineering, Chungbuk National University, Cheongju, 28644, Chungbuk, Republic of Korea

    Chandreswar Mahata

  2. Department of Physics, SRM University-AP, Amaravati, 522502, Andhra Pradesh, India

    Siddhartha Ghosh, Laxmi Narayana Patro, Anjana Tripathi, Ranjit Thapa & Goutam Kumar Dalapati

  3. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive, 3, Singapore, 117576, Singapore

    Sandipan Chakraborty

  4. Center for Nanofibers and Nanotechnology, Faculty of Engineering, National University of Singapore, Singapore, 117576, Singapore

    Seeram Ramakrishna & Goutam Kumar Dalapati

  5. Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, Republic of Korea

    Sungjun Kim

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  1. Chandreswar Mahata
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Correspondence to Chandreswar Mahata or Goutam Kumar Dalapati.

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Mahata, C., Ghosh, S., Chakraborty, S. et al. Charge trapping characteristics of sputter-AlOx/ALD Al2O3/Epitaxial-GaAs-based non-volatile memory. J Mater Sci: Mater Electron 32, 4157–4165 (2021). https://doi.org/10.1007/s10854-020-05157-x

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