Skip to main content
SpringerLink
Log in

Bi-stable magnetoelectric data flip-flop triggered by magnetic field

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

A magnetoelectric (ME) D-FF device in composite of Ni-Zn ferrite/PZT/ Ni-Zn ferrite symmetrical laminate with coil wound around it has been presented. Taking advantage of remnant magnetization effect and ME coupling mediated by strain controlled by bias magnetic field, non-volatile ME voltage of + 60.3 mV and − 59.4 mV can be clearly observed at the EMR of 58 kHz in absence of HDC. Moreover, two types of ME voltages between + 234.4 mV and − 233 mV are switched due to the magneto-mechanic strain variation, when HDC jumps from + 38 Oe to − 38 Oe, or vice versa. The functions of logic “tracking” and “holding”, On+1 = D1 or On+1 = On, are observed at running time. These findings provide great possibilities of the D-FF (counter) based on ME composite applied in proximity readers, to effectively avoid the issues of the high consumption due to using conventional D-FF/counter.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6

Similar content being viewed by others

References

  1. J.F. Lin, M.Y. Tsai, C.S. Chang, Y.M. Tsai, Analog. Integr. Circ. S. 97, 365 (2018)

    Google Scholar 

  2. J. Wang, G. Meloni, G. Berrettini, L. Poti, A. Bogoni, IEEE J. Sel. Top. Quant. 16, 1486 (2010)

    CAS  Google Scholar 

  3. J.C. Jeon, J. Supercomput. 76, 6438 (2019)

    Google Scholar 

  4. L. Artola, G. Hubert, S. Ducret, J. Mekki, A.A. Youssef, N. Ricard, IEEE Trans. Nucl. Sci. 8, 1776 (2018)

    Google Scholar 

  5. K. Absel, L. Manuel, R.K. Kavitha, IEEE Trans. VLSI. Syst. 21, 1693 (2013)

    Google Scholar 

  6. R. Murugasami, U.S. Ragupathy, Microprocess. Microsy. 68, 92 (2019)

    Google Scholar 

  7. N. Verma, D. Mishra, SN. Applied. Sciences. 2, 542 (2020) 

    Article  Google Scholar 

  8. Y. Lee, G. Shin, Y. Lee, IEEE Access. 8, 40232 (2020)

    Google Scholar 

  9. Z. Saeid, G. Mohammad, Microprocess. Microsy. 61, 327 (2018)

    Google Scholar 

  10. K. Rahbari, S.A. Hosseini, Aeu-Int. J. Electron. C. 109, 107 (2019)

    Google Scholar 

  11. M.H. Moaiyeri, Z. Hajmohammadi, M.R. Khezeli, A. Jalali, ECS J. Solid. State.Sc. 7, M69 (2018)

    CAS  Google Scholar 

  12. M.H. Moaiyeri, Z.M. Taheri, M.R. Khezeli, A. Jalali, IEEE Trans. Electromagn. C. 61, 1593 (2019)

    Google Scholar 

  13. K. Monga, N. Chaturvedi, S. Gurunarayanan, Circuit. World. 46, 229241 (2020)

    Google Scholar 

  14. L.A. Adamovskii, Meas. Tech. 51, 1191 (2008)

    CAS  Google Scholar 

  15. N.S. Fetisov, Klin. Med. 36, 145 (1958)

    CAS  Google Scholar 

  16. K. Hara, H. Imai, Klin. Med. 36, 1456 (1974)

    Google Scholar 

  17. E. Litvak, K.R. Foster, M.H. Repacholi, Bioelectromagnetics. 23, 68 (2010)

    Google Scholar 

  18. X. Xue, G.H. Dong, Z.Y. Zhou, D. Xiang, Z.Q. Hu, W. Ren, Z.G. Ye, W. Chen, Z.D. Jiang, M. Liu, ACS Appl. Mater. Inter. 9, 43188 (2017)

    CAS  Google Scholar 

  19. Y. Wang, Y.B. Wang, W. Rao, J.X. Gao, W.L. Zhou, J. Yu, Adv. Manu. Sci Eng. 262, 712715 (2013)

    Google Scholar 

  20. M. Shi, Y.D. Xu, Q.W. Zhang, Q.Y. Yu, C. Gu, Z. Zhao, L. Guo, J. Mater. Sci-Mater. El. 30, 19343 (2019)

    CAS  Google Scholar 

  21. M. Shi, Z. Zhao, Z.L. Si, R.Z. Zuo, Y.D. Xu, L. Guo, E.Y. Men, K.Z. Hu, J. Mater. Sci-Mater. El. 31, 10865 (2020)

  22. C.W. Nan, M.I. Bichurin, S. Dong, D. Viehland, G. Srinivasan, J. Appl. Phys. 103, 031101 (2008)

    Google Scholar 

  23. Z. Chu, V. Annapureddy, M.J. Pourhosseiniasl, MRS Bull. 43, 199 (2018)

    Google Scholar 

  24. Z.F. Duan, X.J. Shi, Y. Cui, Y.H. Wan, Z.X. Lu, G.Y. Zhao, J. Alloy. Compd. 698, 276 (2017)

  25. Y.Q. Dai, Q.Q. Gao, C.J. Cui, L.G. Yang, C.B. Li, X.C. Li, Mater. Res. Bull. 99, 424 (2018)

    CAS  Google Scholar 

  26. T.D. Cuong, N.V. Hung, V.L. Ha, P.A. Tuan, D.T.H. Giang, J. Sci-Adv. Mater. Dev. 5, 354360 (2020)

    Google Scholar 

  27. J.M. Hu, Z. Li, Y.H. Lin, C.W. Nan, Phy. Status. Solidi-R. 4, 106 (2010)

    CAS  Google Scholar 

  28. N. Mehmood, X. Song, G. Tian, Z. Hou, D. Chen, Z. Fan, M. Qin, X. Gao, J. Liu, J. Phys-Condens. Mat. 31, 295802 (2019) 

  29. P.B. Meisenheimer, N. Steve, N.M. Vu, J.T. Heron, J. Appl. Phys. 123, 240901 (2018)

    Google Scholar 

  30. D. Rajaram Patil, Y. Chai, R.C. Kambale, B.G. Jeon, K. Yoo, J. Ryu, W.H. Yoon, D.S. Park, D.Y. Jeong, S.G. Lee, Appl. Phys. Lett. 6, 102391 (2013)

  31. J.V. Vidal, A.V. Turutin, I.V. Kubasov, M.D. Malinkovich, Y.N. Parkhomenko, S.P. Kobeleva, A.L. Kholkin, N.A. Sobolev, IEEE Trans. Ultrason. Ferr. 64, 1102 (2017)

    Google Scholar 

  32. A. Rogovoy, O. Stolbova, Material. Today-Proc. 4, 4611 (2017)

    Google Scholar 

  33. J.T. Zhang, K. Li, D.Y. Chen, D.A. Filippov, Q.F. Zhang, J. Wu, J.G. Tao, L.Z. Cao, G. Srinivasan, J. Magn. Magn. Mater. 494, 165802 (2020)

    CAS  Google Scholar 

  34. Z. Shi, L.Z. Chen, Y.S. Tong, H. Xue, S.Y. Yang, C.P. Wang, X.J. Liu, Appl. Phys. Lett. 102, 112904 (2013)

    Google Scholar 

  35. X.L. Zhang, X. Yao, J.P. Zhou, Z.P. Yang, J. Mater. Sci-Mater. El. 29, 17706 (2018)

    CAS  Google Scholar 

  36. J.T. Zhang, K. Li, D.Y. Chen, D.A. Filippov, Q.F. Zhang, S.Y. Li, X. Peng, J. Wu, R. Timilsina, L.Z. Cao, G. Srinivasan, J. Electron. Mater. 49, 1577 (2020)

    CAS  Google Scholar 

  37. J.T Zhang, W.W Zhu, D.A. Filippov, W. He, D. Chen, K. Li, S. Geng, Q. Zhang, L. Jiang, L. Cao, Rev. Sci. Instrum. 90, 015004 (2019)

    Google Scholar 

  38. J.T. Zhang, D.Y. Chen, K. Li, D.A. Filippov, B.F. Ge, Q.F. Zhang, X.X. Hang, L.Z. Cao, G. Srinivasan, AIP Adv. 9, 035137 (2019)

    Google Scholar 

  39. L.Z. Cao, D.Y. Chen, S.T. Geng, Q.F. Zhang, K. Li, X.X. Hang, B.F. Ge, J.H. Liu, Y. Ruan, R. Timilsina, L.Y. Jiang, J.T. Zhang, J. Mater. Sci-Mater. El. 30, 16347 (2019)

    CAS  Google Scholar 

  40. S.M. Wu, S.A. Cybart, P. Yu, M.D. Rossell, J.X. Zhang, R. Ramesh, R.C. Dynes, Nat. Mater. 9, 756 (2010)

    CAS  Google Scholar 

  41. A. Aubert, V. Loyau, Y. Pascal, F. Mazaleyrat, M. LoBue, Phys. Rev. Appl. 9, 044035 (2018)

    CAS  Google Scholar 

  42. D.R. Patil, Y. Zhou, J.E. Kang, N. Sharpes, D.Y. Jeong, Y.D. Kim, K.H. Kim, S. Priya, J. Ryu, APL. Materials. 2, 046102 (2014)

    Google Scholar 

  43. J.Y. Zhai, J.F. Li, D. Viehland, M.I. Bichurin, J. Appl. Phys. 101, 014102 (2007)

    Google Scholar 

  44. J.T. Zhang, P. Li, Y.M. Wen, W. He, J. Yang, M. Li, A.C. Yang, C.J. Lu, W.L. Li, J. Appl. Phys. 115, 17E517 (2014)

    Google Scholar 

  45. M. Sofronie, F. Tolea, M. Tolea, B. Popescu, M. Valeanu, J. Phys. Chem. Solids. 142, 109446 (2020)

    CAS  Google Scholar 

  46. A.T. Chen, Y. Wen, B. Fang, Y.L. Zhao, Q. Zhang, Y.S. Chang, P.S. Li, H. Wu, H.L. Huang, Y.L. Lu, Z.M. Zeng, J.W. Cai, X.F. Han, T. Wu, X.X. Zhang, Y.G. Zhao, Nat. Commun. 10, 243 (2019)

    Google Scholar 

Download references

Acknowledgements

This study was financially supported by National Natural Science Foundation of China (NSFC) (Grant Nos. 61973279, 62004177and 62073299), Program for Innovative Research Group (in Science and Technology) in University of Henan Province(No. 20IRTSTHN017). The study at Russia was supported by the Russian Foundation for Basic Research (Grant No.18-52-00021). The research at Oakland University was supported by a grant from the National Science Foundation (Grant No. DMR-1808892).

Author information

Authors and Affiliations

  1. College of Electrical and Information Engineering, Zhengzhou University of Light Industry, Zhengzhou, 450002, China

    Kang Li, Jitao Zhang, Qingfang Zhang, Jie Wu, Liying Jiang & Lingzhi Cao

  2. Institute of Electronic and Information Systems, Novgorod State University, Veliky Novgorod, 173003, Russia

    D. A. Filippov

  3. State Grid of Jiangsu Electric Power Co., Ltd., Nanjing, 210024, China

    Jiagui Tao

  4. Physics Department, Oakland University, Rochester, MI, 48309, USA

    Gopalan Srinivasan

Authors
  1. Kang Li
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Jitao Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Qingfang Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. D. A. Filippov
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Jie Wu
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Jiagui Tao
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Liying Jiang
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. Lingzhi Cao
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. Gopalan Srinivasan
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Jitao Zhang.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Li, K., Zhang, J., Zhang, Q. et al. Bi-stable magnetoelectric data flip-flop triggered by magnetic field. J Mater Sci: Mater Electron 32, 2249–2257 (2021). https://doi.org/10.1007/s10854-020-04989-x

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10854-020-04989-x

Search

Navigation