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Synthesis of Al/HfO2/p-Si Schottky diodes and the investigation of their electrical and dielectric properties

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Abstract

As per this work, it is aimed to explore and analyze some dielectric characteristics—such as dielectric constant (\({\varepsilon }^{{\prime}}\)), dielectric loss (\({\varepsilon }{{^{\prime\prime}}}\)), loss tangent (\(\mathrm{tan}\delta \)), AC conductivity (σac), and real (\({M}{^{\prime}}\)) and imaginary (\({M}{{^{\prime\prime}}}\)) parts of the electric modulus—of Al/HfO2/p-Si Schottky diode design based on temperature and frequency. The HfO2 layer was grown on p-Si substrates by atomic layer deposition method. Al metal was deposited on the upper part of this structure as Schottky contact by e-beam evaporation technique. This structure has been studied in different applied bias voltages and frequencies at temperature ranging between 300 and 360 K. The capacitance–voltage–frequency (C–V–f) and conductance-voltage-frequency (G/ω–V–f) characteristics of Al/HfO2/p-Si structure were measured in the frequency range of 10 kHz to 2 MHz by sweeping bias voltage levels (± 4 V, 50 mV steps). The experimental results and analyses confirmed that these dielectric properties of Al/HfO2/p-Si Schottky diode structure were very dependent on the frequency, bias voltage and temperature according to the presence of the interface states and distribution characteristics.

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Acknowledgements

This work is supported by the Scientific and Technological Research Council of Turkey (TUBITAK) under Project No. 114F074 and by Gazi University Scientific Research Fund under Project No. 05/2015-09.

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Authors and Affiliations

  1. Department of Medical Services and Techniques, Eldivan Medical Services Vocational School, Çankırı Karatekin University, Çankırı, Turkey

    Irmak Karaduman Er

  2. Department of Physics, Science Faculty, Gazi University, Ankara, Turkey

    Ali Orkun Çağırtekin, Murat Artuç & Selim Acar

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  1. Irmak Karaduman Er
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  2. Ali Orkun Çağırtekin
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Er, I.K., Çağırtekin, A.O., Artuç, M. et al. Synthesis of Al/HfO2/p-Si Schottky diodes and the investigation of their electrical and dielectric properties. J Mater Sci: Mater Electron 32, 1677–1690 (2021). https://doi.org/10.1007/s10854-020-04937-9

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