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Temperature and frequency dependence of dielectric characteristics, modulus spectroscopy and AC electrical conductivity in Erythrosine B thin films

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Abstract

The structural features of thermally deposited Erythrosine B, (EB), thin films were indexed using X-ray diffraction. The dielectric properties, module of complex dielectric, and alternative current (AC) conductivity of EB thin films were investigated in dark conditions. The dependence of these properties on temperature (303–393 K) and frequency (0.042–100 kHz) was examined. With the rise in frequency, the dielectric constant and dielectric loss decreases. The maximum height of the barrier was determined from the dielectric loss analysis, based on the Giuntini model. The dielectric relaxation mechanism was described based on the complex dielectric (M′ and M″) unit. It was found that the calculated activation energy of the relaxation process was 0.083 eV. Also, it is found that the AC conductivity (σac) increases as the temperature rises, and it complies with the universal power law σac = Aωs. The correlated barrier hopping model demonstrated the reliability of AC conductivity for EB thin films on the temperature. The activation energy (ΔE) was determined upon the AC conductivity temperature dependence.

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Authors and Affiliations

  1. Department of Physics, Faculty of Education, Ain Shams University, Roxy 11757, Cairo, Egypt

    E. F. M. El-Zaidia & H. A. M. Ali

  2. Department of Physics, Faculty of Science, University of Tabuk, Tabuk, 71491, Saudi Arabia

    E. F. M. El-Zaidia

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  1. E. F. M. El-Zaidia
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  2. H. A. M. Ali
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El-Zaidia, E.F.M., Ali, H.A.M. Temperature and frequency dependence of dielectric characteristics, modulus spectroscopy and AC electrical conductivity in Erythrosine B thin films. J Mater Sci: Mater Electron 32, 1528–1535 (2021). https://doi.org/10.1007/s10854-020-04922-2

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