Abstract
Single crystals of Indium Selenide (InSe) were successfully grown by direct vapor transport method. The grown crystals were characterized by estimating their surface morphology, chemical composition, structural, optical and photoconductive properties using appropriate techniques. SEM image suggested that InSe crystal has layered-type surface without morphological defects. Also, the hexagonal structure of crystal has been confirmed by X-ray diffraction (XRD) spectra and selected area electron diffraction (SAED) pattern. The crystal exhibits high absorption coefficient (104 cm−1) in visible region and direct bandgap of 1.22 eV. The trap depth parameters and photoconductivity parameters were determined by the growth-decay curve and they depend upon illumination intensity, temperature and wavelength of incident light. The grown InSe crystals have excellent photoconductive properties and hence can be utilized in different photoelectrical applications.
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The dataset used and analyzed during the current study is available from the corresponding author on reasonable request.
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Acknowledgements
The authors are thankful to the management of C. B. Patel Computer College and J. N. M. Patel Science College for their support. The authors would also like to acknowledge the support from SVNIT (Surat) in providing XRD, EDAX and SEM facilities.
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Patel, P.B., Dhimmar, J.M., Modi, B.P. et al. The advancement of compelling Indium Selenide: synthesis, structural studies, optical properties and photoelectrical applications. J Mater Sci: Mater Electron 32, 1033–1041 (2021). https://doi.org/10.1007/s10854-020-04878-3
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DOI: https://doi.org/10.1007/s10854-020-04878-3