Abstract
In this work, the electrical properties of Bi4Ti3O12 (BiT) were investigated; those presenting interesting electrical and dielectric properties in the radiofrequency (RF) and microwave (MW) range were analysed. BiT has many applications in telecommunication systems and MW circuits. It was synthesized by the solid-state reaction method, and X-ray diffraction was used for structural characterization of this phase. The properties in the RF range were measured by impedance spectroscopy. An imaginary impedance relaxation peak and high values for real impedance were found. The complex impedance plane plots show the presence of a semicircle that was adjusted by an R-CPE circuit, presenting a thermoactive process for the load carriers. The dielectric properties in the MW range were measured using the Hakki–Coleman method, and the thermal stability was measured using the Silva–Fernandes–Sombra (SFS) technique. BiT was tested as an antenna and distant field parameters were measured and simulated.
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Acknowledgements
The authors are grateful to CNPq (402045/2013-0), the US Air Force Office of Scientific Research (AFOSR) (FA9550-16-1-0127), X-ray lab UFC physics department, Central Analı’tica UFC/CT-INFRA/ MCTI-SISNANO/Pro´-Equipamentos CAPES, and CNPq (Process: 402561/2007-4, Edital MCT/CNPq No. 10/2007) for providing financial support.
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Bessa, V.L., De Morais, J.E.V., Oliveira, R.G.M. et al. Enhancing the electrical properties of Bi4Ti3O12 (BiT) matrix by special alloying and sintering. J Mater Sci: Mater Electron 31, 22265–22273 (2020). https://doi.org/10.1007/s10854-020-04727-3
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DOI: https://doi.org/10.1007/s10854-020-04727-3