Abstract
In this work, the effect of surface reduction treatment on the electrical, thermal and mechanical properties of Lithium tantalate (LiTaO3, LT) crystal wafers was investigated by comparing congruent Lithium tantalate (CLT) crystal wafers with deep-reduction black Lithium tantalate (BLT) crystal wafers using a mixture of high-purity aluminium powder and silicon powder as reducing agents. The structural changes of reduced wafers are discussed by XRD. The electrical conductivity of BLT wafers is 6.27 × 10–12 (Ω cm)−1, which is four orders of magnitude higher than the CLT crystal wafers. The Curie temperature and the thermal stability are basically the same with CLT crystal wafers, and the specific heat and hardness are reduced. The data show that high temperature annealing before reduction is conducive to the stress release of CLT crystal wafers, the blackening effect is more easily achieved, and the treated BLT wafer is more anti-static. The results show that the reduction treatment can obviously improve the conductivity of the wafer, so it is easier to improve and eliminate the discharge phenomenon caused by pyroelectric effects in the process of device preparation.
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References
Y. Ma, X. Huang, Y. Song, W. Hang, T. Zhang, Materials 12, 1683 (2019)
W. Hang, X. Huang, M. Liu, Y. Ma, Materials 12, 4213 (2019)
Y. Ma, X.W. Huang, Y.X. Song, W. Hang, J.L. Yuan, T.H. Zhang, Materials 12, 2799 (2019)
X. Gong, M. Fang, G. Fei, M. Liu, F. Li, G. Shang, L. Zhang, RSC Adv. 5, 31615–31621 (2015)
T. Yan, F. Zheng, Y. Yu, S. Qin, H. Liu, J. Wang, D. Yu, J. Appl. Cryst. 44, 158–162 (2011)
T. Yan, H. Liu, J. Wang, F. Zheng, S. Yao, Z. Xia, J. Wu, J. Alloy. Compd. 497, 412–415 (2010)
J. Wu, Z. Chen, R.K. Choubey, C. Lan, Mater. Chem. Phys. 133, 813–817 (2012)
T. Yan, N. Ye, L. Xu, Y. Sang, Y. Chen, W. Song, X. Long, J. Wang, H. Liu, J. Phys. D: Appl. Phys. 49, 195005 (2016)
A.V. Yatsenko, M.N. Palatnikov, N.V. Sidorov, A.S. Pritulenko, S.V. Evdokimov, Phys. Solid State 57, 1547–1550 (2015)
Z.Q. Liang, S.B. Li, Z.J. Liu, Y.D. Jiang, W.Z. Li, T. Wang, J. Wang, J. Mater. Sci. Mater. Electron. 26, 5400–5404 (2015)
E.M. Standifer, D.H. Jundt, R.G. Norwood, P.F. Bordui, Proceedings of the Annual IEEE International Frequency Control Symposium (IEEE, Pasadena, 1998), pp. 470–472
Y. Long, M. Yu, H. Li, Z. Shi, L. Wang, Y. Ding, Y. Xu, Z. Wu, Piezoelectrics Acoustooptics 41, 340–343 (2019)
P.F. Bordui, D.H. Jundt, E.M. Standifer, R.G. Norwood, J. Appl. Phys. 85, 3766–3769 (1999)
T. Yan, S. Yao, H. Liu, J. Wang, Z. Zuo, Z. Xia, Chinese J. Rare Metal. 33, 713–717 (2009)
X.F. Zhang, B. Liang, W. Zhou, Mater. China 33, 58–60 (2011)
Acknowledgements
This research was funded by the National Natural Science Foundation of China, grant number 61965001 and 11864001; the Ningxia Province Key Research and Development Program, grant number 2018BEE03015; the Natural Science Foundation of Ningxia, grant number 2018AAC03118 and 2019AAC03103; the Ningxia first-class discipline and scientific research projects (electronic science and technology), grant number NXYLXK2017A07. The authors thank the Key Laboratory of North Minzu University (Physics and Photoelectric Information Functional Materials Sciences and Technology), the Ningxia advanced intelligent perception control innovation team, the Ningxia acoustooptic-crystals industrialization Innovation team and the Ningxia new solid electronic materials and Devices research and development innovation team.
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Xiao, X., Zhang, H. & Zhang, X. Preparation, electrical, thermal and mechanical properties of black lithium tantalate crystal wafers. J Mater Sci: Mater Electron 31, 16414–16419 (2020). https://doi.org/10.1007/s10854-020-04193-x
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DOI: https://doi.org/10.1007/s10854-020-04193-x