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Influence of phase transformation on structure–property relationship in quaternary In10Sb10Ag10Se70 chalcogenide films

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Abstract

This work reports the effect of thermal annealing (353–413 K) on structure and physical properties of thermally evaporated In10Ag10Sb10Se70 chalcogenide films. The samples were characterized by X-ray diffraction, transmission electron microscopy, TEM, Raman spectroscopy, optical absorption and photoconductivity measurements. Thermal annealing favours amorphous to polycrystalline structure transition with the growth of Se, AgInSe2 and AgSbSe2 phases. A significant change in position/shape of Raman bands upon annealing has been observed. The indirect optical gap decreases from 1.44 to 0.68 eV while tailing parameter increases with annealing. Photosensitivity decreases from 29.3 to 14.2 with annealing temperature. The decay of photocurrents is well fitted to stretched exponential function; the value of decay time constant increases while local minimum value of dispersion parameter at 353 K has been observed. These results are explained on the basis of amorphous crystalline phase transformation in chalcogenides and are important for developing new materials for emerging technologies.

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Authors and Affiliations

  1. Department of Physics, GND University, Amritsar, 143005, India

    Rita Sharma, Shaveta Sharma, R. Thangaraj & M. Mian

  2. Department of Physics, DAV University, Jalandhar, 144012, India

    Praveen Kumar

  3. Material Science Division, Inter University Accelerator Centre, New Delhi, India

    K. Asokan

Authors
  1. Rita Sharma
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  2. Shaveta Sharma
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  3. Praveen Kumar
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  4. R. Thangaraj
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  5. K. Asokan
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  6. M. Mian
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Correspondence to Praveen Kumar.

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Sharma, R., Sharma, S., Kumar, P. et al. Influence of phase transformation on structure–property relationship in quaternary In10Sb10Ag10Se70 chalcogenide films. J Mater Sci: Mater Electron 31, 16398–16405 (2020). https://doi.org/10.1007/s10854-020-04191-z

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