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Processing and characterization of co silicide ohmic contacts to 4H–SiC

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Abstract

Silicon carbide (SiC) is a promising material for power devices because of its wide bandgap and high thermal conductivity. However, carbon remaining in the metal–SiC interface (carbon cluster) adversely affects the ohmic contacts. As a result, the ohmic contact characteristic worsens and the on-state power loss of the device increases. In addition, the carbon cluster in the metal–SiC interface degrades the device’s high-temperature thermal stability. In this paper, Co/Si/Co/Si is used as an ohmic contact material to reduce the carbon cluster and improve the thermal stability. The specific contact resistivity was measured, and the effect of the Co:Si composition ratio and the annealing condition for the ohmic contact was analyzed. The thermal stability was investigated by measuring the specific contact resistivity through a thermal duration test. The measurement results were analyzed using the X-ray diffraction method.

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Acknowledgements

This research was supported by the Ministry of Trade, Industry, and Energy (MOTIE) (Ministry of Science and ICT (MSIT), Korea, under the Information Technology Research Center (ITRC) support program (IITP-2020-2018-0-01421). This study was also supervised by the Institute for Information & Communications Technology Promotion (IITP).

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  1. Electronic Engineering, Sogang University, Seoul, Korea

    Taehong Kim, Junghun Kim & Kwangsoo Kim

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  1. Taehong Kim
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  2. Junghun Kim
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  3. Kwangsoo Kim
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Correspondence to Kwangsoo Kim.

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Kim, T., Kim, J. & Kim, K. Processing and characterization of co silicide ohmic contacts to 4H–SiC. J Mater Sci: Mater Electron 31, 16299–16307 (2020). https://doi.org/10.1007/s10854-020-04178-w

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