This paper presents an in-depth performance-based comparison of organic field-effect transistors (OFETs) prepared using the conventional spin coating (SC) technique and a recently developed floating film transfer method (FTM). A remarkable improvement in the performance of transistors fabricated using FTM was achieved in comparison to their SC counterparts. The estimated value of width-normalized contact resistance in FTM-based OFETs was an order lower in comparison to that of transistors prepared using SC technique. The observed results were credited to a significant enhancement in the length of π-conjugation due to the presence of edge-on oriented polymer chains of active layer deposited using FTM, leading to the lowering of carrier injection barrier at the Au/P3HT interface. These results were well supported through absorption, photoluminescence and Raman measurements as well as the anisotropy measurements using polarized absorption spectra, which also pointed towards the improvement in the polymer chain alignment of thin films prepared by FTM over that prepared by the conventional SC technique. The results indicate thin film morphology as a key towards reducing the contact resistance in OFETs.
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The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.
A. Facchetti, Chem. Mater. 23, 733–758 (2011)
M.L. Jones, D.M. Huang, B. Chakrabarti, C. Groves, J. Phys. Chem. C 120, 4240–4250 (2016)
Y. Ogata, D. Kawaguchi, K. Tanaka, J. Phys. Chem. Lett. 6, 4794–4798 (2015)
N. Koch, Phys. Status Solidi RRL 6, 277–293 (2012)
G. Gelinck, P. Heremans, K. Nomoto, T.D. Anthopoulos, Adv. Mater. 22, 3778–3798 (2010)
H. Marien, M.S.J. Steyaert, E. Veenendaal, P. Heremans, IEEE J. Solid State Circuits 47, 1–9 (2012)
C. Di, F. Zhang, D. Zhu, Adv. Mater. 25, 313–330 (2013)
V. Singh, M. Yano, W. Takashima, K. Kaneto, Jpn. J. Appl. Phys. 45, 534–537 (2006)
K. Bhargava, V. Singh, J. Comput. Electron. 13, 585–592 (2014)
K. Bhargava, A. Bilgaiyan, V. Singh, J. Nanosci. Nanotechnol. 15, 9414–9422 (2015)
Y. Guo, G. Yu, Y. Liu, Adv. Mater. 22, 4427–4447 (2010)
E. Orgiu, N. Crivillers, M. Herder, L. Grubert, M. Patzel, J. Frisch, E. Pavlica, D.T. Duong, G. Bratina, A. Salleo, N. Koch, S. Hecht, P. Samori, Nat. Chem. 4, 675–679 (2012)
V. Singh, A.K. Thakur, S.S. Pandey, W. Takashima, K. Kaneto, Appl. Phys. Exp. 1, 021801 (2008)
V. Singh, A.K. Thakur, S.S. Pandey, W. Takashima, K. Kaneto, Synth. Met. 158, 283–286 (2008)
V. Singh, A.K. Thakur, S.S. Pandey, W. Takashima, K. Kaneto, Jpn. J. Appl. Phys. 47, 1251–1255 (2008)
Q. Wang, Y. Zhou, H. Zheng, J. Shi, C. Li, C.Q. Su, L. Wang, C. Luo, D. Hu, J. Pei, J. Wang, J. Peng, Y. Cao, Org. Electron. 12, 1858–1863 (2011)
V. Singh, S.S. Pandey, W. Takashima, K. Kaneto, Jpn. J. Appl. Phys. 48, 061503 (2009)
K. Bhargava, V. Singh, Synth. Met. 211, 49–57 (2016)
V. Singh, A.K. Thakur, S.S. Pandey, W. Takashima, K. Kaneto, Org. Electron. 9, 790–796 (2008)
W.R. Salaneck, M. Lögdlund, J. Birgersson, P. Barta, R. Lazzaroni, J.L. Brédas, Synth. Met. 85, 1219–1220 (1997)
K. Kanai, M. Honda, H. Ishii, Y. Ouchi, K. Seki, Org. Electron. 13, 309–319 (2012)
K. Bhargava, M. Shukla, V. Singh, Synth. Met. 233, 15–21 (2017)
H.N. Tsao, D. Cho, J.W. Andreason, A. Rouhanipour, D.W. Breiby, W. Pisula, K. Müllen, Adv. Mater. 21, 209–212 (2009)
J. Kan, Y. Chen, D. Qi, Y. Liu, J. Jiang, Adv. Mater. 24, 1755–1758 (2012)
Y. Liu, Q. Shi, H. Dong, J. Tan, W. Hu, X. Zhan, Org. Electron. 13, 2372–2378 (2012)
A. Carlo, F. Piacenza, A. Bolognesi, B. Stadlober, H. Maresch, Appl. Phys. Lett. 86, 263501 (2005)
H. Sirringhaus, Adv. Mater. 17, 2411–2425 (2005)
W. Zhang, Y. Han, X. Zhu, Z. Fei, Y. Feng, N.D. Treat, H. Faber, N. Stingelin, I. McCulloch, T.D. Anthopoulos, M. Heeney, Adv. Mater. 28, 3922–3927 (2016)
K. Sethuraman, S. Ochiai, K. Kojima, T. Mizutani, Appl. Phys. Lett. 92, 183302 (2008)
S. Han, X. Yu, W. Shi, X. Zhuang, J. Yu, Org. Electron. 27, 160–166 (2015)
L.A. Morrison, D. Stanfield, M. Jenkins, A.A. Baronov, D.L. Patrick, J.M. Leger, Org. Electron. 33, 269–273 (2016)
T. Morita, V. Singh, S. Nagamatsu, S. Oku, W. Takashima, K. Kaneto, Appl. Phys. Express 2, 111502 (2009)
M. Pandey, S. Nagamatsu, S.S. Pandey, S. Hayase, W. Takashima, Org. Electron. 38, 115–120 (2016)
M. Pandey, S.S. Pandey, S. Nagamatsu, S. Hayase, W. Takashima, Org. Electron. 43, 240–246 (2017)
M. Pandey, S.S. Pandey, S. Nagamatsu, S. Hayase, W. Takashima, Thin Solid Films 619, 125–130 (2016)
K. Bhargava, V. Singh, Appl. Phys. Express 9, 091601 (2016)
A. Nawaz, A. Kumar, I.A. Hṻmmelgen, Org. Electron. 51, 94–102 (2017)
M. Pandey, S. Nagamatsu, W. Takashima, S.S. Pandey, S. Hayase, J. Phys. Chem. C 121, 11184–11184 (2017)
J. Clark, J.-F. Chang, F.C. Spano, R.H. Friend, C. Silva, Appl. Phys. Lett. 94, 163306 (2009)
J.-F. Chang, J. Clark, N. Zhao, H. Sirringhaus, D.W. Breiby, J.W. Andreasen, M.M. Nielsen, M. Giles, M. Heeney, I. McCulloch, Phys. Rev. B 74, 11531 (2006)
J. Clark, C. Silva, R.H. Friend, F.C. Spano, Phys. Rev. Lett. 98, 206406 (2007)
M. Sim, J. Shin, C. Shim, M. Kim, S.B. Jo, J.-H. Kim, K. Cho, J. Phys. Chem. C 118, 760–766 (2014)
E.-S. Shin, Y.-Y. Noh, Org. Electron. 53, 111–116 (2018)
Y. Hu, G. Li, Z. Chen, IEEE Electron Device Lett. 39, 276–279 (2018)
W.C. Tsoi, D.T. James, J.S. Kim, P.G. Nicholson, C.E. Murphy, D.D.C. Bradley, J. Nelson, J.S. Kim, J. Am. Chem. Soc. 133, 9834–9841 (2011)
H.F. Haneef, A.M. Zeidell, O.D. Jurchescu, J. Mater. Chem. C 8, 759–787 (2020)
Y. Xu, C. Liu, D. Khim, Y.-Y. Noh, Phys. Chem. Chem. Phys. 17, 26553–26574 (2015)
T. Matsumoto, W. Ou-Yang, K. Miyake, T. Uemura, J. Takeya, Org. Electron. 14, 2590–2595 (2013)
C. Liu, Y. Xu, Y.-Y. Noh, Mater. Today 18, 79–96 (2015)
S.D. Wang, T. Miyadera, T. Minari, Y. Aoyagi, K. Tsukagoshi, Appl. Phys. Lett. 93, 043311 (2008)
Y. Xu, C. Liu, W. Scheideler, P. Darmawan, S. Li, F. Balestra, G. Ghibaudo, K. Tsukagoshi, Org. Electron. 14, 1797–1804 (2013)
L. Shu, W. Shi, W. Huang, J. Yu, J. Mater. Sci. Mater. Electron. 25, 5540–5545 (2014)
A. Dauendorffer, S. Nagamatsu, W. Takashima, K. Kaneto, Jpn. J. Appl. Phys. 51, 055802 (2012)
One of the authors V.S. would like to thank Department of Science and Technology (DST) India, for providing financial support to the Project No: EMR/2016/008018, titled “Development of Low Voltage High Sensitivity Organic Photosensitive Transistors for Near Infrared Light Sensors”. K.B. is grateful to Sophisticated Instrument Centre, IIT Indore for providing the fluorescence facility. Authors would further like to acknowledge Dr. Pankaj R Sagdeo, IIT Indore for providing the usage of UV–Visible spectrophotometer. V.S. would also like to thank director IIT Indore for his constant support.
The research is presented by “Department of Science and Technology (DST) India under the Project No: EMR/2016/008018, titled “Development of Low Voltage High Sensitivity Organic Photosensitive Transistors for Near Infrared Light Sensors”.
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Bhargava, K., Yadav, N., Kumari, N. et al. Reduced contact resistance in organic field-effect transistors fabricated using floating film transfer method. J Mater Sci: Mater Electron (2020). https://doi.org/10.1007/s10854-020-04092-1