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Defect dipoles inducing the larger piezoelectric properties in BaBi4Ti4−x(Cu0.5W0.5)xO15 ceramics

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Abstract

BaBi4Ti4−x(Cu0.5W0.5)xO15 ceramics with Cu2+ and W6+ co-substitution for the B-site Ti4+ were prepared by using the solid-state reaction process. It was desirable that piezoelectric properties of the BaBi4Ti4−x(Cu0.5W0.5)xO15 ceramics could be improved by inducing the larger lattice distortion with the oxygen vacancy defects neutralized and restrained. Results of the X-ray diffraction analysis confirmed that crystal cell parameter c decreased obviously with the increase in the crystal cell parameter a. Curie temperature, resistivity, and piezoelectric properties of the BBT ceramics are improved by the copper and tungsten modification. The maximum value of piezoelectric coefficient (~ 30 pC/N) can be obtained in the BaBi4Ti4−x(Cu0.5W0.5)xO15 ceramics.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (51472197 and 51602242), the Shaanxi Key Laboratory Fundament Research Foundation (18JS049), and the Fundamental Research Foundation (XAGDXJJ17009) of XATU of China.

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Authors and Affiliations

  1. Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an, 710021, China

    Pinyang Fang, Wuli Yang, Chongyang Zhi, Li Xu & Zengzhe Xi

  2. College of Materials Science and Engineering, Beijing University of Technology, 100 Ping Le Yuan, Chaoyang District, Beijing, 100124, China

    Yanlin Jia

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  1. Pinyang Fang
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Fang, P., Yang, W., Zhi, C. et al. Defect dipoles inducing the larger piezoelectric properties in BaBi4Ti4−x(Cu0.5W0.5)xO15 ceramics. J Mater Sci: Mater Electron 31, 15258–15266 (2020). https://doi.org/10.1007/s10854-020-04090-3

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