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Lanthanum-doped BiFeO3/ZrO2 gate stack for ferroelectric field effect transistors

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Abstract

A metal–ferroelectric–insulator–semiconductor (MFIS) structure was fabricated with lanthanum (La)-doped BiFeO3 as ferroelectric and ZrO2 as the high-k insulator layer. The BiFeO3 film with 5 M doped La was prepared with sol–gel and ZrO2 film was physically deposited with rf sputtering. Films structural characteristics were obtained using X-ray diffraction and scanning electron microscopy (SEM). The ferroelectric film shows the perovskite structure with orientation (110)/(104) when annealed in the range from 400 to 700 °C. The dielectric film shows an amorphous structure for the same range of annealing temperature. Electrical and ferroelectric properties were obtained by fabricating and characterizing metal/ferroelectric/silicon (MFS), metal/ferroelectric/metal (MFM), metal/insulator/silicon (MIS), metal/ferroelectric/insulator/metal (MFIM) and metal/ferroelectric/insulator/silicon (MFIS) capacitor structures with ferroelectric film of 200 nm thickness and dielectric film of various thicknesses. MFS structure shows a maximum memory window of 3.5 V and leakage current density of 1.4 × 10–8 A/cm2 with ferroelectric film annealed at 500 °C. The memory window was further improved to 6.62 V and leakage current to the order 10–10 A/cm2 with the introduction of 9 nm insulator layer between ferroelectric and silicon. The same device shows an excellent endurance property tested for 1012 cycles and data retention tested for 5.56 h. The device shows a breakdown of 43 V, which is 9 V higher than the MFS structure. To the best of author’s knowledge, this is the first report to integrate La-doped BiFeO3 on ZrO2 (high-k) dielectric for non-volatile memory applications.

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Acknowledgements

The authors would like to express their sincere thanks to Prof. P. Nagabhushan, Director, Indian Institute of Information Technology-Allahabad for his constant support and encouragement.

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  1. Department of Electronics and Communication Engineering, Indian Institute of Information Technology, Allahabad, Prayagraj, 211015, Uttar Pradesh, India

    Amit Singh & Sanjai Singh

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  1. Amit Singh
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  2. Sanjai Singh
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Correspondence to Amit Singh.

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Singh, A., Singh, S. Lanthanum-doped BiFeO3/ZrO2 gate stack for ferroelectric field effect transistors. J Mater Sci: Mater Electron 31, 16189–16198 (2020). https://doi.org/10.1007/s10854-020-04073-4

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  • DOI: https://doi.org/10.1007/s10854-020-04073-4

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