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A comprehensive study on Cu2SnS3 prepared by sulfurization of Cu–Sn sputtered precursor for thin-film solar cell applications

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Abstract

In this work, a comprehensive study on the influences of the various synthesizing parameters of monoclinic Cu2SnS3 using the RF sputtering method, followed by the sulfurization process, is investigated. In particular, the impact of sputtering power and pressure on multi-material target Cu–Sn (compositional ratio Cu:Sn of 52:48%) was examined. All samples exhibited a monoclinic structure with similar split bandgaps around 0.9 eV. Increasing sputtering power showed direct effects on the sputtered Cu/Sn atoms ratio and the secondary phases obtained. The increase of sputtering pressure causes gas droplets and blistering on the film surfaces. The effects of changing the sulfurization temperature and the sulfur powder amount were also studied. The increase in the sulfurization temperature reduces the surface roughness, increases film crystallinity, and minimizes Cu-based secondary phases. The sulfur amount used during the sulfurization process showed a vital impact on film formation. Using a small amount of sulfur produced a partially sulfurized film that exhibited a poor performance solar cell. A power conversion efficiency of 1.94% is achieved with the optimized condition for the bare Cu2SnS3 without doping or heat treatment for the fabricated cell.

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Data availability

The data that support the findings of this study are available from the corresponding author, Mohamed S. Abdel-Latif, upon reasonable request.

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Acknowledgements

The authors would like to express their sincere gratitude to the Ministry of Higher Education (MOHE) – Egypt for their financial support and Tokyo University of Science - Noda Campus for offering the facilities and tools contribution.

Funding

This work was funded by the Ministry of Higher Education (MOHE) – Egypt and supported by the Tokyo University of Science - Noda Campus by offering the facilities and tools.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Egypt-Japan University of Science and Technology (E-JUST), New Borg El Arab City, 21934, Alexandria, Egypt

    Mohamed S. Abdel-Latif, Amr Hessein & A. Abdel-Moniem

  2. Engineering Physics and Mathematics Department, Faculty of Engineering, Tanta University, 31511, Tanta, Egypt

    Mohamed S. Abdel-Latif

  3. Solid State Physics Department, National Research Center, Dokki, Giza, 12311, Egypt

    Wafaa Magdy

  4. Solar Cell Lab, Center of Excellence for Advanced Sciences, National Research Centre, Dokki, Giza, 12311, Egypt

    Wafaa Magdy

  5. Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, 278-8510, Japan

    Taichi Tosuke, Ayaka Kanai & Mutsumi Sugiyama

  6. Department of Mathematical and Physical Engineering, Faculty of Engineering (Shoubra), Benha University, 11614, Cairo, Egypt

    Amr Hessein

  7. Physics Department, Faculty of Science, Assiut University, 71516, Assiut, Egypt

    N. M. Shaalan

  8. Department of Physics, College of Science, King Faisal University, P.O. Box 400, Al-Ahsa, 31982, Saudi Arabia

    N. M. Shaalan

  9. Department of Mechanical and Electrical System Engineering, Kyoto University of Advanced Science, 615-8577, Kyoto, Japan

    Koichi Nakamura

  10. Center for the Promotion of Interdisciplinary Education and Research, Kyoto University, 615-8540, Kyoto, Japan

    Koichi Nakamura

  11. Nanoscience Program, Institute of Basic and Applied Sciences, Egypt-Japan University of Science and Technology, New Borg El Arab City, 21934, Alexandria, Egypt

    A. Abdel-Moniem

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  1. Mohamed S. Abdel-Latif
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  6. N. M. Shaalan
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Correspondence to Mohamed S. Abdel-Latif.

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Abdel-Latif, M.S., Magdy, W., Tosuke, T. et al. A comprehensive study on Cu2SnS3 prepared by sulfurization of Cu–Sn sputtered precursor for thin-film solar cell applications. J Mater Sci: Mater Electron 31, 14577–14590 (2020). https://doi.org/10.1007/s10854-020-04018-x

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  • DOI: https://doi.org/10.1007/s10854-020-04018-x

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