Abstract
The optically colorless l-asparagine thioacetamide (LATA) single crystal was grown by the slow evaporation method at room temperature with water as a solvent. The lattice parameters of the grown crystal have been analyzed by the single crystal X-ray diffraction and it belongs to orthorhombic system with space group P212121. The crystalline nature of the title material was confirmed by powder XRD analysis. The functional groups were confirmed by using FT-IR spectral analysis. The grown crystal has a UV cut-off wavelength at 236 nm and various optical parameters were analyzed theoretically by using UV–Visible transmittance data. The enhancement of second harmonic generation efficiency of LATA crystal was found to be 2.4 times higher than that of standard KDP. The laser damage threshold of LATA crystal is determined as 13.47 J/cm2 by using Nd–YAG laser operated at 1064 nm. In the photoluminescence spectrum, the sharp emission peak was noticed at 470 nm which implies the blue emission. The grown crystal shows the positive photoconductive nature. The fluctuation of dielectric permittivity (Ɛo) and dielectric loss (tan δ) were analyzed at different temperatures as a function of frequency. The grown crystal was thermally stable up to 110.38 °C and it was assessed by (TG/DTA) analysis. The Vickers microhardness test was accomplished to identify the mechanical stability of the grown crystal. Hence, LATA crystal is the most suitable material for the optoelectronic device applications.
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Acknowledgements
The authors are thankful to SAIF, IIT Madras for single crystal XRD analysis and B.S. Abdur Rahman Crescent University for extending the LDT studies. The author is thankful to Dr. G.G. Muley, department of physics, SGBA University for SHG test.
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Suresh, T., Vetrivel, S., Gopinath, S. et al. Investigation on synthesis, laser damage threshold, and NLO properties of l-asparagine thioacetamide single crystal for photonic device applications. J Mater Sci: Mater Electron 31, 13310–13320 (2020). https://doi.org/10.1007/s10854-020-03884-9
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DOI: https://doi.org/10.1007/s10854-020-03884-9