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Swanepoel method for AlInN/AlN HEMTs

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Abstract

In this study, AlInN/AlN high electron mobility transistor (HEMT) structure is grown on c-oriented sapphire substrate using metal organic chemical vapor deposition method. Optical properties of the structure are investigated by photoluminescence (PL) and ultraviolet (UV–Vis.) spectras. According to PL results, direct bandgap of AlN is determined around 2.80 eV. In UV–Vis. spectra it is seen that conduction of AlInN layer starts at 360 nm. Swanepoel envelope method is applied on transmission spectra and some optical properties such as refractive index (n), film thickness (t), absorption coefficient (α), and extinction coefficient (k) are determined. Forbidden energy bandgap is determined again from Tau method and it is compared with the value gained from PL spectra. This study is a rare one that presents optical properties of HEMTs using Swanepoel and Tau methods. In addition to this, it helps estimating how optical properties of HEMTs effect electrical properties.

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Authors and Affiliations

  1. Physics Department, Gazi University, Ankara, Turkey

    Omer Akpinar, Ahmet Kürsat Bilgili, Mustafa Kemal Ozturk & Suleyman Ozcelik

  2. Photonics Research Center, Gazi University, Ankara, Turkey

    Omer Akpinar, Umran Ceren Baskose, Mustafa Kemal Ozturk & Suleyman Ozcelik

  3. Physics Department, Bilkent University, Ankara, Turkey

    Ekmel Ozbay

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  1. Omer Akpinar
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  2. Ahmet Kürsat Bilgili
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  4. Mustafa Kemal Ozturk
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Akpinar, O., Bilgili, A.K., Baskose, U.C. et al. Swanepoel method for AlInN/AlN HEMTs. J Mater Sci: Mater Electron 31, 9969–9973 (2020). https://doi.org/10.1007/s10854-020-03590-6

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  • DOI: https://doi.org/10.1007/s10854-020-03590-6

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