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Point defects behavior analysis in thin films and massif SnO2 by AES spectroscopy and photoluminescence

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Abstract

Point defect properties of three samples of tin-oxide are analyzed in a comparative two stages study (before and after treatments), using Auger spectroscopy (AES) and Photoluminescence (PL). Samples 1 and 2 are thin films and sample 3 is a massif one. A huge amount of carbon was detected in sample 1 and 2 via the AES analysis. The PL spectra obtained at 300 K, after the ionic bombardment and 300 °C heating, showed a small increase of their intensities in the visible-IR domain for sample 2, while the spectrum of sample 1 remains almost unchanged and presents an optical stability. A global shift in the near-UV region is remarkable in comparison with sample 3. This indicates the presence of new point defects generated in both surface and bulk which are most likely due to oxygen and tin vacancies. The SRIM-code (stopping range of ions in matter) has been used to test this proposition with different stoichiometries of SnO2. The correlation curves between the positions (wavelengths) of the main peaks of the PL spectra, given at different low temperatures of the PL-device, showed a variation in concentration of point defects related to the areas under those peaks. We confirm the location of new point defects in the three regions of emission which act as luminescent centers.

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Acknowledgements

D.G. is very grateful to Pr. N. HAMDADOU for providing help in the XRD structural analysis realized in the LaMiN Laboratory, ENPO-MA.

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Authors and Affiliations

  1. LABMAT, National Polytechnic School of Oran, ENP Oran-Maurice AUDIN, Oran, Algeria

    Djamel Ghaffor, Zakia Lounis, Abdelkrim Mahfoud, Amira Derri, Amel Hadj-Kaddour & M’hamed Bouslama

  2. LaMiN, National Polytechnic School of Oran, ENP Oran-Maurice AUDIN, Oran, Algeria

    Chawki Zegadi

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  1. Djamel Ghaffor
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Ghaffor, D., Lounis, Z., Zegadi, C. et al. Point defects behavior analysis in thin films and massif SnO2 by AES spectroscopy and photoluminescence. J Mater Sci: Mater Electron 31, 10213–10224 (2020). https://doi.org/10.1007/s10854-020-03567-5

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