Abstract
La–Ti codoped BiFeO3 (BLXFTO, X = 0, 0.025, 0.05, 0.075) thin films have been prepared successfully on ITO/glass substrates by a sol–gel method. The effects of multi-element co-doping on the structure and electrical properties of BFO thin film were studied. It is proved that a certain amount of doping content can promote the development of (110) orientation. All the films show well-saturated P–E hysteresis loop, simultaneously with high-rectangular. Most importantly, the larger 2Pr and lower coercive force field of the BLXFTO (X = 0.05) film were around 131 μC/cm2 and 280 kV/cm, respectively.
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Acknowledgements
This work was supported by National Natural Science Foundation of China (51672164, 51772172, 51972179 and 51902168); Major Scientific and Technological Innovation Project in Shandong (2017CXGC0414 and 2018CXGC0412); Natural Science Foundation of Shandong Province (ZR2017MEM016, ZR2017BEM043 and ZR2018BEM023); and Science and Technology Program for Young Innovation Team in Colleges and Universities of Shandong Province (2019KJA003).
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Qiu, CC., Zhang, YY., Lv, XS. et al. The enhanced dielectric and ferroelectric properties of La–Ti codoped BiFeO3 based thin films on ITO/glass substrates. J Mater Sci: Mater Electron 31, 6394–6397 (2020). https://doi.org/10.1007/s10854-020-03195-z
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DOI: https://doi.org/10.1007/s10854-020-03195-z