Skip to main content
SpringerLink
Log in

Mechanism and control of preferred Cu6Sn5 growth on single crystal (001)Cu

  • Review
  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

Preferred orientation Cu6Sn5 prisms are usually formed on (001)Cu single crystal, making use of which can highly improve the packaging reliability of electronic devices. A practical method for morphology controlling of preferred orientation Cu6Sn5 was put forward preliminarily in this article based on temperature variation. The roof-type Cu6Sn5 prisms actually behaved as scallops of highly preferred orientation relationship with (001)Cu substrate in isothermal heating of reflow process and began to transform into prismatic roofs without grain number and orientation changing following it cooled down to solidification. This new phenomenon undiscovered before can pave the way for understanding the precise mechanism of roof-type Cu6Sn5 formation and provide a scientific viewpoint that orientation, size, and outline control of oriented Cu6Sn5 should be realized in different stages of reflow process. This is quite significant for manufacture of morphology-controllable solder interconnections in electronic industry.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8
Fig. 9
Fig. 10
Fig. 11

Similar content being viewed by others

References

  1. H.Y. Hsiao, C.M. Liu, H.W. Lin, T.C. Liu, C.L. Lu, Y.S. Huang, C. Chen, K.N. Tu, Science 336, 1007 (2012)

    Article  CAS  Google Scholar 

  2. W.W. Shen, Y.M. Lin, S.C. Chen, H.H. Chang, T.C. Chang, W.C. Lo, C.C. Lin, Y.F. Chou, D.M. Kwai, M.J. Kao, K.N. Chen, IEEE J. Electron Devices Soc. 6, 396 (2018)

    Article  CAS  Google Scholar 

  3. K.N. Tu, H.Y. Hsiao, C. Chen, Microelectron. Reliab. 53, 2 (2013)

    Article  CAS  Google Scholar 

  4. W.S. Kwon, D.T. Alastair, K.H. Teo, S. Gao, T. Ueda, T. Ishigaki, Appl. Phys. Lett. 98(23), 232106 (2011)

    Article  Google Scholar 

  5. Z.H. Zhang, M.Y. Li, Z.Q. Liu, S.H. Yang, Acta Mater. 104, 1 (2016)

    Article  CAS  Google Scholar 

  6. H.F. Zou, H.J. Yang, Z.F. Zhang, Acta Mater. 56, 2649 (2008)

    Article  CAS  Google Scholar 

  7. J.O. Suh, K.N. Tu, N. Tamura, Appl. Phys. Lett. 91, 051907 (2007)

    Article  Google Scholar 

  8. M.L. Huang, F. Yang, Sci. Rep. 4, 7117 (2014)

    Article  CAS  Google Scholar 

  9. Y.S. Huang, H.Y. Hsiao, C. Chen, K.N. Tu, Scr. Mater. 66, 741 (2012)

    Article  CAS  Google Scholar 

  10. T.C. Liu, C.M. Liu, Y.S. Huang, C. Chen, K.N. Tu, Scr. Mater. 68, 241 (2013)

    Article  CAS  Google Scholar 

  11. L. Jiang, N. Chawla, Scr. Mater. 63, 480 (2010)

    Article  CAS  Google Scholar 

  12. J.M. Song, B.R. Huang, C.Y. Liu, Y.S. Lai, Y.T. Chiu, T.W. Huang, Mater. Sci. Eng. A 534, 53 (2012)

    Article  CAS  Google Scholar 

  13. L. Jiang, H.Q. Jiang, N. Chawla, J. Electron. Mater. 41, 2083 (2012)

    Article  CAS  Google Scholar 

  14. C.Y. Liu, Y.J. Hu, Y.S. Liu, H.W. Tseng, T.S. Huang, C.T. Lu, Y.C. Chuang, S.L. Cheng, Acta Mater. 61, 5713 (2013)

    Article  CAS  Google Scholar 

  15. Z.H. Zhang, H. Cao, M.Y. Li, Y.X. Yu, H.F. Yang, S.H. Yang, Mater. Des. 94, 280 (2016)

    Article  CAS  Google Scholar 

  16. A. Kunwar, B.F. Guo, S.Y. Shang, P. Raback, Y.P. Wang, J. Chen, H.T. Ma, X.G. Song, N. Zhao, Intermetallics 93, 186 (2018)

    Article  CAS  Google Scholar 

  17. B.F. Guo, A. Kunwar, C.R. Jiang, N. Zhao, J.H. Sun, J. Chen, Y.P. Wang, M.L. Huang, H.T. Ma, J. Mater. Sci.-Mater. Electron. 29, 589 (2018)

    Article  CAS  Google Scholar 

  18. H.R. Ma, A. Kunwar, S.Y. Shang, C.R. Jiang, Y.P. Wang, H.T. Ma, N. Zhao, Intermetallics 96, 1 (2018)

    Article  CAS  Google Scholar 

  19. R. Huang, H.R. Ma, S.Y. Shang, A. Kunwar, Y.P. Wang, H.T. Ma, J. Mater. Sci. Mater. Electron. 30(5), 4359 (2019)

    Article  CAS  Google Scholar 

  20. A.M. Gusak, K.N. Tu, Phys. Rev. B 66, 115403 (2002)

    Article  Google Scholar 

  21. J.O. Suh, K.N. Tu, G.V. Lutsenko, A.M. Gusak, Acta Mater. 56, 1075 (2008)

    Article  CAS  Google Scholar 

  22. Y. Zhong, N. Zhao, C.Y. Liu, W. Dong, H.T. Ma, Appl. Phys. Lett. 111(22), 223502 (2017)

    Article  Google Scholar 

  23. N. Zhao, Y. Zhong, W. Dong, M.L. Huang, H.T. Ma, C.P. Wong, Appl. Phys. Lett. 110(9), 093504 (2017)

    Article  Google Scholar 

  24. W. Liu, D.P. Sekulic, Langmuir 27(11), 6720 (2011)

    Article  CAS  Google Scholar 

  25. W. Liu, Y. Li, Y. Cai, D.P. Sekulic, Langmuir 27(23), 14260 (2011)

    Article  CAS  Google Scholar 

  26. A. Gangulee, G.C. Das, M.B. Bever, Metall. Trans. 4(9), 2063 (1973)

    Article  CAS  Google Scholar 

  27. Y.Q. Wu, J.C. Barry, T. Yamamoto, Q.F. Gu, S.D. McDonald, S. Matsumura, H. Huang, K. Nogita, Acta Mater. 60, 6581 (2012)

    Article  CAS  Google Scholar 

  28. M.Y. Li, Z.H. Zhang, J.M. Kim, Appl. Phys. Lett. 98, 201901 (2011)

    Article  Google Scholar 

  29. B.F. Guo, H.T. Ma, C.R. Jiang, Y.P. Wang, A. Kunwar, N. Zhao, J. Mater. Sci. Mater. Electron. 28(7), 5398 (2017)

    Article  CAS  Google Scholar 

Download references

Acknowledgements

The authors gratefully acknowledge financial support from the project funded by the National Key Research and Development Program of China (Grant No. 2017YFA0403804) and the National Natural Science Foundation of China (Grant No. 51871040).

Author information

Authors and Affiliations

  1. School of Microelectronics, Dalian University of Technology, Dalian, 116024, China

    H. R. Ma & X. G. Li

  2. School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116024, China

    C. Dong, J. Chen, Y. P. Wang & H. T. Ma

Authors
  1. H. R. Ma
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. C. Dong
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. J. Chen
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Y. P. Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. X. G. Li
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. H. T. Ma
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to H. T. Ma.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Ma, H.R., Dong, C., Chen, J. et al. Mechanism and control of preferred Cu6Sn5 growth on single crystal (001)Cu. J Mater Sci: Mater Electron 31, 5966–5974 (2020). https://doi.org/10.1007/s10854-020-03150-y

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10854-020-03150-y

Search

Navigation