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Investigation on the electrical properties of amorphous IZALO thin-film transistors

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Abstract

Indium-Zinc-Aluminum-Lithium Oxide (IZALO) films and thin-film transistors (TFTs) were fabricated by radio frequency magnetron sputtering in this paper. X-ray diffraction test data show that IZALO films annealed at 325 ℃ in air atmosphere are amorphous. IZALO TFTs have excellent electrical properties with saturation mobility (µsat) of 28.2 cm2/V s, on/off current ratio (Ion/Ioff) of 1 × 109, off-state current (Ioff) of 1 × 10−12A, subthreshold swing (SS) of 0.51 V/dec, and threshold voltage (VTH) of 1.4V, respectively. The VTH shifts of IZALO TFTs under positive bias and negative bias were investigated.

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References

  1. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, H. Hosono, Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor. Science 300, 1269–1272 (2003)

    Article  CAS  Google Scholar 

  2. H. Hosono, N. Kikuchi, N. Ueda, H. Kawazoe, Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples. J. Non-Cryst. Solids 198, 165–169 (1996)

    Article  Google Scholar 

  3. Y.-L. Wang, F. Ren, W. Lim, D. Norton, S. Pearton, I. Kravchenko, J. Zavada, Room temperature deposited indium zinc oxide thin film transistors. Appl. Phys. Lett. 90, p. 232103, (2007).

    Article  Google Scholar 

  4. E. Fortunato, P. Barquinha, G. Goncalves, L. Pereira, R. Martins, High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors. Solid-State Electron. 52, pp. 443–448, (2008).

    Article  CAS  Google Scholar 

  5. H. Chiang, J. Wager, R. Hoffman, J. Jeong, D.A. Keszler, High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer. Appl. Phys. Lett. 86, p. 013503, (2005).

    Article  Google Scholar 

  6. R. Hoffman, Effects of channel stoichiometry and processing temperature on the electrical characteristics of zinc tin oxide thin-film transistors. Solid State Electron. 50, pp. 784–787, (2006).

    Article  CAS  Google Scholar 

  7. A. Suresh, P. Wellenius, A. Dhawan, J. Muth, Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors. Appl. Phys. Lett. 90, p. 123512, (2007).

    Article  Google Scholar 

  8. H. Hosono, K. Nomura, Y. Ogo, T. Uruga, T. Kamiya, Factors controlling electron transport properties in transparent amorphous oxide semiconductors. J. Non-cryst. Solids 354, pp. 2796–2800, (2008).

    Article  CAS  Google Scholar 

  9. L. Ao, L. Guo-Xia, S. Fu-Kai, Z. Hui-Hui, B. Shin, W. Lee, C. Cho, High-performance InTiZnO thin-film transistors deposited by magnetron sputtering. Chin. Phys. Lett. 30, p. 127301, (2013).

    Article  Google Scholar 

  10. J. Park, Y. Lim, M. Jang, S. Choi, N. Hwang, M. Yi, Improved stability of aluminum co-sputtered indium zinc oxide thin-film transistor. Mater. Res. Bull. 96, pp. 155–159, (2017).

    Article  CAS  Google Scholar 

  11. Y. Han, H. Yan, Y.-C. Tsai, Y. Li, Q. Zhang, H.-P.D. Shieh, Influences of nitrogen doping on the electrical characteristics of Indium-Zinc-Oxide thin film transistors. IEEE Trans. Device Mater. Reliab. 16, pp. 642–646, (2016).

    Article  CAS  Google Scholar 

  12. S.J. Kim, S. Yoon, H.J. Kim, Review of solution-processed oxide thin-film transistors. Jpn. J. Appl. Phys. 53, p. 02BA02, (2014).

    Article  Google Scholar 

  13. P.K. Nayak, J. Jang, C. Lee, Y. Hong, Effects of Li doping on the performance and environmental stability of solution processed ZnO thin film transistors. Appl. Phys. Lett. 95, p. 193503, (2009).

    Article  Google Scholar 

  14. S.-Y. Han, M.-C. Nguyen, A.H.T. Nguyen, J.-W. Choi, J.-Y. Kim, R. Choi, Effect of Li-doping on low temperature solution-processed indium–zinc oxide thin film transistors. Thin Solid Films 641, pp. 19–23, (2017).

    Article  CAS  Google Scholar 

  15. S.Y. Park, B.J. Kim, K. Kim, M.S. Kang, K.H. Lim, T.I. Lee, J.M. Myoung, H.K. Baik, J.H. Cho, Y.S. Kim, Low-temperature, solution‐processed and alkali metal doped ZnO for high‐performance thin‐film transistors. Adv. Mater. 24, pp. 834–838, (2012).

    Article  CAS  Google Scholar 

  16. I.-H. Cho, H.-W. Park, K.-B. Chung, C.-J. Kim, B.-H. Jun, Influence of lithium doping on the electrical properties and ageing effect of ZnSnO thin film transistors. Semicond. Sci. Technol. 33, p. 085004, (2018).

    Article  Google Scholar 

  17. S. Jeong, Y.G. Ha, J. Moon, A. Facchetti, T.J. Marks, Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution‐derived indium zinc oxide thin‐film transistors. Adv. Mater. 22, pp. 1346–1350, (2010).

    Article  CAS  Google Scholar 

  18. J.G. Um, M. Mativenga, J. Jang, Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress. Appl. Phys. Lett. 103, p. 033501, (2013).

    Article  Google Scholar 

  19. J. Dong, D. Han, H. Li, W. Yu, S. Zhang, X. Zhang, Y. Wang, Effect of Al doping on performance of ZnO thin film transistors. Appl. Surf. Sci. 433, pp. 836–839, (2018).

    Article  CAS  Google Scholar 

  20. L. Yue, F. Meng, J. Chen, Effect of active-layer composition and structure on device performance of coplanar top-gate amorphous oxide thin-film transistors. Semicond. Sci. Technol. 33, p. 015012, (2017).

    Article  Google Scholar 

  21. L.-C. Liu, J.-S. Chen, J.-S. Jeng, Role of oxygen vacancies on the bias illumination stress stability of solution-processed zinc tin oxide thin film transistors. Appl. Phys. Lett. 105, p. 023509, (2014).

    Article  Google Scholar 

  22. J. Zhang, J. Lu, Q. Jiang, B. Lu, X. Pan, L. Chen, Z. Ye, X. Li, P. Guo, N. Zhou, Stability of amorphous InAlZnO thin-film transistors. J. Vacuum Sci. Technol. B 32, p. 010602, (2014).

    Article  Google Scholar 

  23. K. Tominaga, T. Takao, A. Fukushima, T. Moriga, I. Nakabayashi, Amorphous ZnO–In2O3 transparent conductive films by simultaneous sputtering method of ZnO and In2O3 targets. Vacuum 66, pp. 505–509, (2002).

    Article  CAS  Google Scholar 

  24. B. Li, H. Wang, D. Zhou, Z. Hu, H. Wu, Y. Peng, L. Yi, X. Zhang, Y. Wang, Effect of annealing temperature on the electrical properties of In–Zn–Li–O thin film transistors. Solid-State Electron. 111, pp. 18–21, (2015).

    Article  CAS  Google Scholar 

  25. E. Fortunato, P. Barquinha, R. Martins, Oxide semiconductor thin-film transistors: a review of recent advances. Adv. Mater. 24, pp. 2945–2986, (2012).

    Article  CAS  Google Scholar 

  26. J.K. Jeong, H. Won Yang, J.H. Jeong, Y.-G. Mo, H.D. Kim, Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors. Appl. Phys. Lett. 93, p. 123508, (2008).

    Article  Google Scholar 

  27. J. Zhang, X. Li, J. Lu, N. Zhou, P. Guo, B. Lu, X. Pan, L. Chen, Z. Ye, Water assisted oxygen absorption on the instability of amorphous InAlZnO thin-film transistors. RSC Adv. 4, pp. 3145–3148, (2014).

    Article  CAS  Google Scholar 

  28. P.-T. Liu, Y.-T. Chou, L.-F. Teng, Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress. Appl. Phys. Lett. 95, p. 233504, (2009).

    Article  Google Scholar 

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant No. 51772019).

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Authors and Affiliations

  1. Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing, 100044, China

    Lanchao Jia, Depeng Liu, Hui Yang, Jinbao Su, Lixin Yi & Xiqing Zhang

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  1. Lanchao Jia
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  2. Depeng Liu
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Correspondence to Xiqing Zhang.

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Jia, L., Liu, D., Yang, H. et al. Investigation on the electrical properties of amorphous IZALO thin-film transistors. J Mater Sci: Mater Electron 31, 4867–4871 (2020). https://doi.org/10.1007/s10854-020-03049-8

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