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Thermal annealing of AlN films for piezoelectric applications

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Abstract

Aluminum nitride is an excellent electrical insulator and important piezoelectric material making it suitable for a wide range of applications in electronics and optoelectronics. However, to exhibit and preserve those piezoelectric properties, care has to be taken during manufacturing process. Indeed, the c-axis crystalline orientation of AlN is a necessary condition for piezoelectricity. Therefore, the goal of this paper is to compare AlN films grown on (100) silicon substrate by pulsed reactive DC sputtering at 400 °C on top of three different metallic underlayer electrodes (Ti/Pt, Cr/Pt, and AlN/Cr/Pt) by preserving the crystalline properties not only at room temperature but also at high temperatures. Among all deposited AlN films on top of the metallic underlayer electrode, only AlN/Cr/Pt has kept its crystallinity up to 950 °C.

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Acknowledgements

This work was partly supported by the French RENATECH network with FEMTO-ST and C2N as technological facilities.

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Authors and Affiliations

  1. Centre de Nanosciences et de Nanotechnologies, CNRS UMR 9001, Univ. Paris-Sud, Université Paris-Saclay, 91120, Palaiseau, France

    Etienne Herth

  2. FEMTO-ST, Université de Franche Comté, UBFC, CNRS UMR 6174-25044, Besançon, France

    Dame Fall, Jean-Yves Rauch & Virginie Mourtalier

  3. Department of Physics & Astronomy, University of Arkansas at Little Rock, 2801 South University Avenue, Little Rock, AR, 72204, USA

    Grégory Guisbiers

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  1. Etienne Herth
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Herth, E., Fall, D., Rauch, JY. et al. Thermal annealing of AlN films for piezoelectric applications. J Mater Sci: Mater Electron 31, 4473–4478 (2020). https://doi.org/10.1007/s10854-020-02984-w

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