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Enhanced ferroelectric properties of \(\hbox {BaTiO}_3\) films via rapid thermal processing

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Abstract

Single-crystal \(\hbox {BaTiO}_3\) (BTO) films were prepared by pulsed laser deposition (PLD) on (100) \(\hbox {SrRuO}_3\)(SRO) buffered \(\hbox {SrTiO}_3\)(STO) substrates, which were treated by rapid thermal processing (RTP) in the temperature range of 600–750 \(^\circ {\hbox {C}}\). The XRD, Ferroelectric test system, Hall effect Test Station and current–voltage (I–V) characteristics were used to study microstructure and electrical properties. The results show that the RTP temperature can affect the microstructure of films, the contact of the interfaces and ferroelectric properties. The films exhibit small leakage current, resistance, barrier height, and better ferroelectric properties treated by RTP at \(650 \,^\circ {\hbox {C}}\).

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Acknowledgements

Generous financial support from National Natural Science Foundation of China (Grant Nos. 51462003, 51762010) and the Science Research Plan Funds of Guizhou province of China (Qian Ke He Ren Cai [2015]4006) are gratefully acknowledged.

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  1. Key Laboratory of Electronic Functional Composite Materials of Guizhou Province, Department of Electronic Science, College of Big Data and Information Engineering, Guizhou University, Guiyang, 550025, People’s Republic of China

    Min Zhang & Chaoyong Deng

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Zhang, M., Deng, C. Enhanced ferroelectric properties of \(\hbox {BaTiO}_3\) films via rapid thermal processing. J Mater Sci: Mater Electron 31, 3130–3136 (2020). https://doi.org/10.1007/s10854-020-02859-0

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