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Optical, structural and electrical properties of ZnO thin films doped with Mn


Manganese-doped zinc oxide (Mn-doped ZnO) thin films were synthesized on soda lime glass substrates using the spray pyrolysis technique at substrates temperatures of 400, 450 and 500 °C. Compositional, optical, structural, morphological and electrical properties were studied with Rutherford Backscattering Spectrometry (RBS), Ultraviolet and Visible Spectroscopy (UVS), X-Ray Diffraction (XRD) analysis, Scanning Electron Microscopy (SEM) and the Four Point method, respectively. Mn-doped ZnO films show changes in transmittance and energy band gap when substrate temperature is increased. In the same way, electrical resistivity measurements show changes with temperature, getting a minimum value at 450 °C. The results were also compared with undoped ZnO thin films. They show that constant lattices, crystallite size and resistivity increase with Mn doping. These variations are the result of the substitution of Zn by Mn ions during the incorporation of Mn ions in the ZnO lattice. On the other hand, energy band gap values decrease when the samples were doped with Mn, due to the sd and pd exchange interactions.

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The authors want to thank the technical assistance of Roberto Hernández, Diego Quiterio, Francisco Javier Jaimes, Mauricio Escobar and Antonio Morales. This work was supported by UNAM DGAPA-PAPIIT under Grants IN 101-219 and IN 102-419.

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López-Suárez, A., Acosta, D., Magaña, C. et al. Optical, structural and electrical properties of ZnO thin films doped with Mn. J Mater Sci: Mater Electron 31, 7389–7397 (2020).

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