Abstract
We report experimental results in neutron-irradiated silicon containing carbon. Initially, carbon interstitial (Ci) defects form and readily associate with self-interstitials in the course of irradiation leading to the production of Ci(SiI) defects and upon annealing to the sequential formation of Ci(SiI)n complexes. Infrared spectroscopy measurements report the detection of two localized vibrational bands at 953 and 960 cm−1 related to the Ci(SiI) defect. The thermal stability and annealing kinetics of the defect are discussed. The decay out of the two bands occurs in the temperature range of 130–200 °C. They follow second-order kinetics with an activation energy of 0.93 eV. No other bands were detected to grow in the spectra upon their annealing. Density functional theory calculations were used to investigate the structure and the energetics of the Ci(SiI) and the Ci(SiI)2 defects.
Similar content being viewed by others
References
W.W. Moses, Nucl. Instr. Methods Phys. Res. A 610, 11 (2009)
L.C. Andreani, A. Bozzola, P. Kowalczewski, M. Liscidini, L. Redorici, Adv. Phys. 4, 1548305 (2018)
A.H. Atabaki, S. Moazeni, F. Pavanello, H. Gevorgyan, J. Notaros, L. Alloatti, M.T. Wade, C. Sun, S.A. Kruger, H. Meng, K. Al Qubaisi, I. Wang, B. Zhang, A. Khilo, C.V. Baiocco, M.A. Popović, V.M. Stojanović, R.J. Ram, Nature 556, 349 (2018)
G. Lindstrom, Nucl. Instr. Methods Phys. Res. A 512, 30 (2003)
H.-W. Hubers, S.G. Pavlov, V.N. Shastin, Semicond. Sci. Technol. 20, S211 (2005)
R.C. Newman, in Defects in Silicon II, vol. 91-9, ed. by W.M. Bullis, U. Gosele, F. Shimura (Proceedings, 1991), p. 271
D. Tsuchiγa, K. Sueoka, H. Yamamoto, Phys. State Solidi A (2019). https://doi.org/10.1002/pssa.201800615
C.A. Londos, A. Andrianakis, Ε.Ν. Sgourou, V.V. Emtsev, H. Oyama, J. Appl. Phys. 109, 033508 (2011)
E. Simoen, S.K. Dhayalan, A. Hikavyy, R. Loo, E. Rosseel, H. Vrielinck, J. Lauwaert, ECS J. Solid State Sci. Technol. 6, P284 (2017)
H. Wang, A. Chroneos, E.N. Sgourou, C.A. Londos, U. Schwingenschlogl, Sci. Rep. 4, 4909 (2014)
A. Chroeos, E.N. Sgourou, C.A. Londos, U. Schwingenschlogl, Appl. Phys. Rev. 2, 021306 (2015)
C.A. Londos, Physica Status Solidi 92, 609 (1985)
C.A. Londos, Semicond. Sci. Technol. 5, 645 (1990)
F. Zirkelbach, B. Stritzker, K. Nordlund, J.K.N. Lindner, W.G. Schmidt, E. Rauls, Phys. Rev. B 84, 064126 (2011)
E. Simoen, S.K. Dhayalan, A. Hikavyy, R. Loo, E. Rosseel, H. Vrielinck, J. Lauwaert, ECS J. Solid State Sci. Technol. 6, P284 (2017)
G. Davies, Mater. Sci. Forum 38–41, 151 (1989)
A. Matoni, F. Bernadini, L. Colombo, Phys. Rev. B 66, 195214 (2002)
B.C. MacEvoy, S.I. Watts, Solid State Phenom. 57–58, 221 (1997)
R. Pinacho, P. Castrillo, M. Jaraiz, I. Martin-Bragado, J. Bartolla, H.-J. Gossmann, G.-H. Gilmer, I.-L. Benton, J. Appl. Phys. 92, 1582 (2002)
A.E. Michael, W. Rausch, P.A. Ronsheim, R.H. Kastl, Appl. Phys. Lett. 50, 416 (1987)
K.S. Jones, J. Liu, L. Zhang, V. Krishnamurtly, R.T. DeHoff, Nucl. Instum. Methods Phys. Res. B 106, 227 (1995)
S. Lee, G.S. Hwang, Phys. Rev. B 78, 045204 (2008)
S.S. Kapur, T. Sinno, Phys. Rev. B 82, 045205 (2010)
S.S. Kapur, M. Prasad, T. Sinno, Phys. Rev. B 69, 155214 (2004)
C.A. Londos, D.N. Aliprantis, G. Antonaras, M.S. Potsidi, T. Angeletos, J. Appl. Phys. 123, 145702 (2018)
S.-R.G. Christopoulos, E.N. Sgourou, R.V. Vovk, A. Chroneos, C.A. Londos, Solid State Commun. 263, 19 (2017)
M.S. Potsidi, C.A. Londos, J. Appl. Phys. 100, 033523 (2006)
S.-R.G. Christopoulos, E.N. Sgourou, R.V. Vovk, A. Chroneos, C.A. Londos, Materials 11, 612 (2018)
G. Davies and R.C. Newman, in Handbook of Semiconductors, vol. 3, ed. by S. Mahajan (Elsevier, Amsterdam, 1994), p. 1557–1635
C.A. Londos, M.S. Potsidi, E. Stakakis, Phys. B 340–342, 551 (2003)
S.P. Chappell, R.C. Newman, Semicond. Sci. Technol. 2, 691 (1987)
M.C. Payne, M.P. Teter, D.C. Allan, T.A. Arias, J.D. Joannopoulos, Rev. Mod. Phys. 64, 1045 (1992)
M.D. Segall, P.J.D. Lindan, M.J. Probert, C.J. Pickard, P.J. Hasnip, S.J. Clark, M.C. Payne, J. Phys. 14, 2717 (2002)
J. Perdew, K. Burke, M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996)
D. Vanderbilt, Phys. Rev. B 41, 7892 (1990)
H.J. Monkhorst, J.D. Pack, Phys. Rev. B 13, 5188 (1976)
A. Chroneos, C.A. Londos, J. Appl. Phys. 107, 093518 (2010)
A. Chroneos, C.A. Londos, E.N. Sgourou, P. Pochet, Appl. Phys. Lett. 99, 241901 (2011)
E.N. Sgourou, D. Timerkaeva, C.A. Londos, D. Aliprantis, A. Chroneos, D. Caliste, P. Pochet, J. Appl. Phys. 113, 113506 (2013)
H. Wang, A. Chroneos, C.A. Londos, E.N. Sgourou, U. Schwingenschlögl, Appl. Phys. Lett. 103, 052101 (2013)
J. Bourgoin, M. Lannoo, Point Defects in Semiconductors II Experimental Aspects (Springer, Berlin, 1983). ISBN-13:978-3-642-81834-9
S. Ishino, F. Nakazawa, R. Hasiguti, J. Phys. Chem. Solids 24, 1033 (1963)
P.W. Atkins, Physical Chemistry (Oxford University Press, Oxford, 1994)
K.J. Laidler, Chemical Kinetics (Harper & Row, New York, 1987)
R. Radu, I. Pintilie, L.F. Makarenko, E. Fretwurst, G. Lindstroem, J. Appl. Phys. 123, 161402 (2018)
E. Grow, F. Davis, M. Maxfield, Statistical Manual (Dover, New York, 1960), pp. 157–158
R.C. Newman, R. Jones, in Semiconductors and Semimetals, vol. 42, ed. by F. Shimura (Academic Press San Diego, 1994), p. 289
H. Stein, in the 2nd Internat. Conf. Neutron Transmutation Doping in Semiconductors, ed. by J. Meese (Plenum Press, New York, 1979) p. 229
R.C. Newman, Rep. Prog. Phys. 45, 1163 (1982)
D.H.J. Totterdell, R.C. Newman, J. Phys. C 8, 589 (1975)
J. Adey, J.P. Goss, R. Jones, P.R. Briddon, Phys. Rev. B 67, 245325 (2003)
P. Varotsos, Solid State Ionics 179, 438–441 (2008)
A. Chroneos, H. Bracht, R.W. Grimes, B.P. Uberuaga, Mater. Sci. Eng., B 154–155, 72–75 (2008)
A. Chroneos, R.V. Vovk, Solid State Ionics 274, 1–3 (2015)
D.C. Parfitt, M.W.D. Cooper, M.J.D. Rushton, S.-R.G. Christopoulos, M.E. Fitzpatrick, A. Chroneos, RSC Adv. 6, 74018–74027 (2016)
N.V. Sarlis, E.S. Skordas, Solid State Ionics 335, 82–85 (2019)
Acknowledgements
T. Angeletos is grateful to the A. S. Onassis Foundation for financial support though his Ph.D. scholarship (Grant No. G ZL 001-1/2015-2016).
Author information
Authors and Affiliations
Corresponding authors
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Londos, C.A., Christopoulos, SR.G., Chroneos, A. et al. The Ci(SiI)n defect in neutron-irradiated silicon. J Mater Sci: Mater Electron 31, 930–934 (2020). https://doi.org/10.1007/s10854-019-02602-4
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-019-02602-4